Engineering Creativity Award: Optoelectronic Multilayer Characterization

这项研究项目涉及用于超高速光电通信和交换系统的新材料组合的创新增长和用于表征和质量评估的创新方法。碲化镉(Cate)层将在砷化镓/硅(GaAs/Si)衬底上生长。使用GaAs/Si衬底提供了利用BaAs的快速光电子电路和成熟的硅VLSI技术的可能性。在创建单片红外探测器系统时，将研究砷化镓和汞盐的组合。光致发光(PL)是一种著名的表征技术，它将与新的思想相结合来表征薄膜的质量，并将缺陷与薄膜的生长条件相关联。该方法的中心是在空间上控制发光从样品发出的区域。光致发光将与电致发光和pn结的几何排列相结合，以便在重要区域限制和控制载流子。发光技术的组合提供了来自样品不同部分的多余载流子的注入，并且pn结利用内置电场限制了载流子。可以预期，通过以独特的方式结合使用光致发光和电致发光来表征薄层的一些新方法。

This research project is concerned with the innovative growth of new combinations of materials and creative methods for characterization and quality assessment of these new materials systems for use in ultra fast optoelectronic communication and switching systems. Cadmium telluride (CaTe) layers will be grown on gallium arsenide/silicon (GaAs/Si) substrates. The use of GaAs/Si substrates offers the possibility of exploiting the fast optoelectronic circuitry of BaAs and established silicon VLSI technology. Combinations of GaAs and mercury CaTe will be investigated in the creation of a monolithic infrared detector system. Photoluminescence (PL) which is a well known characterization technique will be combined with new ideas to characterize the film quality and to correlate defects with the film growth conditions. The approach centers around spatially controlling the area where the luminescence emanates from the sample. Photoluminescence is to be combined with electroluminescence and geometrical arrangements of pn junctions in order to confine and control carriers in areas of importance. The combination of luminescene techniques provides the injection of excess carrier from different parts of the sample and the pn junctions confine the carriers with built-in electric fields. Some new approaches to the characterization of thin layers from the combined used of photo and electroluminescence in unique ways can be anticipated.