Engineering Creativity Award: Optoelectronic Multilayer Characterization

该研究项目关注的是新材料组合的创新增长，以及这些新材料系统的特性和质量评估的创造性方法，这些新材料系统用于超高速光电子通信和开关系统。碲化镉（CaTe）层将生长在砷化镓/硅（GaAs/Si）衬底上。GaAs/Si衬底的使用为开发BaAs的快速光电电路和已建立的硅VLSI技术提供了可能性。砷化镓和汞CaTe的组合将被研究在一个单片红外探测器系统的创建。光致发光（PL）是一种众所周知的表征技术，它将与新的思想相结合来表征薄膜的质量，并将缺陷与薄膜生长条件联系起来。该方法的中心是在空间上控制发光从样品发出的区域。光致发光将与电致发光和pn结的几何排列相结合，以便在重要区域限制和控制载流子。发光技术的结合提供了从样品的不同部分注入多余的载流子，pn结用内置电场限制载流子。利用光致发光和电致发光相结合的独特方法来表征薄层的一些新方法是可以预期的。

This research project is concerned with the innovative growth of new combinations of materials and creative methods for characterization and quality assessment of these new materials systems for use in ultra fast optoelectronic communication and switching systems. Cadmium telluride (CaTe) layers will be grown on gallium arsenide/silicon (GaAs/Si) substrates. The use of GaAs/Si substrates offers the possibility of exploiting the fast optoelectronic circuitry of BaAs and established silicon VLSI technology. Combinations of GaAs and mercury CaTe will be investigated in the creation of a monolithic infrared detector system. Photoluminescence (PL) which is a well known characterization technique will be combined with new ideas to characterize the film quality and to correlate defects with the film growth conditions. The approach centers around spatially controlling the area where the luminescence emanates from the sample. Photoluminescence is to be combined with electroluminescence and geometrical arrangements of pn junctions in order to confine and control carriers in areas of importance. The combination of luminescene techniques provides the injection of excess carrier from different parts of the sample and the pn junctions confine the carriers with built-in electric fields. Some new approaches to the characterization of thin layers from the combined used of photo and electroluminescence in unique ways can be anticipated.