Engineering Creativity Award: Optoelectronic Multilayer Characterization

该研究项目关注的是 新的材料组合和创造性的方法， 这些新材料的表征和质量评估 用于超快速光电子通信的系统， 切换系统 碲化镉（CaTe）层将生长 在砷化镓/硅（GaAs/Si）衬底上。 使用 GaAs/Si衬底提供了利用快速退火的可能性。 BaAs光电电路和已建立的硅超大规模集成电路 技术. GaAs和汞CaTe的组合将是 研究在创建一个单片红外探测器 系统 光致发光（PL）是众所周知的 特征化技术将结合新的想法， 表征薄膜质量，并将缺陷与 薄膜生长条件 该方法在空间上围绕 控制发光从发光区发出的区域， sample. 光致发光将与 电致发光和pn的几何排列 结，以限制和控制载体的区域， 重要性 发光技术的组合提供了 从不同部分注入过量载流子 样品和pn结限制了载流子， 电场 关于表征的一些新方法 从结合使用的照片和 可以预期以独特方式的电致发光。

This research project is concerned with the innovative growth of new combinations of materials and creative methods for characterization and quality assessment of these new materials systems for use in ultra fast optoelectronic communication and switching systems. Cadmium telluride (CaTe) layers will be grown on gallium arsenide/silicon (GaAs/Si) substrates. The use of GaAs/Si substrates offers the possibility of exploiting the fast optoelectronic circuitry of BaAs and established silicon VLSI technology. Combinations of GaAs and mercury CaTe will be investigated in the creation of a monolithic infrared detector system. Photoluminescence (PL) which is a well known characterization technique will be combined with new ideas to characterize the film quality and to correlate defects with the film growth conditions. The approach centers around spatially controlling the area where the luminescence emanates from the sample. Photoluminescence is to be combined with electroluminescence and geometrical arrangements of pn junctions in order to confine and control carriers in areas of importance. The combination of luminescene techniques provides the injection of excess carrier from different parts of the sample and the pn junctions confine the carriers with built-in electric fields. Some new approaches to the characterization of thin layers from the combined used of photo and electroluminescence in unique ways can be anticipated.