ROW Research Initiation: Space Charge Phenomena in High Resistivity Semiconductors

本次调查的目的是研究 注入电场附近空间电荷的弛豫行为 高电阻率半导体上的接触。 运输 介电弛豫控制区中的电荷载流子 空间电荷的概念还不太清楚。 材料是 研究了高纯硅和锗在低 室温下的砷化镓，其中它们 是半绝缘的。 从低电阻率到高电阻率的转变 电阻率将使用电流-电压进行研究， 电容-电压技术，以观察 从寿命主导到弛豫主导的材料 传导 高电阻率半导体变得更加重要， 电子电路变得更加高度集成（增加了 在单个芯片上的器件密度，或者相反地， 相邻电子元件之间的距离）， 增加了将相邻电子器件绝缘的必要性 彼此的元素。使用绝缘或半绝缘 材料储存收费也增加了需要了解的 这些材料中的介电弛豫效应。 的 人们对这些材料的传输物理学知之甚少， 部分被忽视，目前有争议。 这 研究旨在提供准确和现实的数据， 半绝缘材料运输。

The objective of this investigation is to study the relaxation behavior of the space charge near injecting electrical contacts on high resistivity semiconductors. The transport of charge carriers in the regime dominated by dielectric relaxation of space charge is not well understood. The materials being investigated are high purity silicon and germanium at low temperatures and gallium arsenide at room temperature, where they are semi-insulating. The transition from low resistivity to high resistivity will be studied using current-voltage and capacitance-voltage techniques to observe the transition in the material from lifetime-dominated to relaxation=dominated conduction. High-resistivity semiconductors become more important as electronic circuits become more highly integrated (increasing the density of devices on a single chip or conversely decreasing the distance between neighboring electronic elements), which increases the necessity to insulate neighboring electronic elements from each other. Use of insulating or semi-insulating materials to store charge also increases the need to understand the dielectric relaxation effects in these materials. The transport physics of these materials is poorly understood, partially ignored, and controversial at the present time. This research aims to provide accurate and realistic data on the transport in semi-insulating materials.