ROW Research Initiation: Space Charge Phenomena in High Resistivity Semiconductors

本研究的目的是研究高电阻率半导体注入电触点附近空间电荷的弛豫行为。在空间电荷的介电弛豫主导下，载流子的输运尚不清楚。正在研究的材料是低温下的高纯度硅和锗，室温下的砷化镓，它们是半绝缘的。从低电阻率到高电阻率的转变将使用电流-电压和电容-电压技术来研究，以观察材料从寿命主导到弛豫主导的转变。随着电子电路集成度的提高（增加单个芯片上设备的密度，或相反地减少相邻电子元件之间的距离），高电阻率半导体变得更加重要，这就增加了相邻电子元件相互隔离的必要性。使用绝缘或半绝缘材料来储存电荷也增加了理解这些材料中的介电弛豫效应的需要。这些材料的输运物理目前还不太清楚，部分被忽视，并且存在争议。本研究旨在提供准确、真实的半绝缘材料输运数据。

The objective of this investigation is to study the relaxation behavior of the space charge near injecting electrical contacts on high resistivity semiconductors. The transport of charge carriers in the regime dominated by dielectric relaxation of space charge is not well understood. The materials being investigated are high purity silicon and germanium at low temperatures and gallium arsenide at room temperature, where they are semi-insulating. The transition from low resistivity to high resistivity will be studied using current-voltage and capacitance-voltage techniques to observe the transition in the material from lifetime-dominated to relaxation=dominated conduction. High-resistivity semiconductors become more important as electronic circuits become more highly integrated (increasing the density of devices on a single chip or conversely decreasing the distance between neighboring electronic elements), which increases the necessity to insulate neighboring electronic elements from each other. Use of insulating or semi-insulating materials to store charge also increases the need to understand the dielectric relaxation effects in these materials. The transport physics of these materials is poorly understood, partially ignored, and controversial at the present time. This research aims to provide accurate and realistic data on the transport in semi-insulating materials.