Development of a Scanning Electron Microscope Based Microcharacterization Facility

基于扫描电子显微镜的微观表征设备的开发

• 批准号: 9112979
• 负责人: Nancy Haegel
• 金额: $ 10.4万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1992-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9112979&HistoricalAwards=false
• 关键词: Development; Scanning; Electron; Microscope; Based

This award is for the development of an SEM-based micro- characterization facility, with optimized cathodoluminesence and charge collection capabilities for electronic materials research. A demonstration model scanning electron microscope and components for cathodoluminesence and charge collection studies will be purchased. Current areas of materials research include selective area growth of heteroepitaxial semiconductors, large bandgap semiconductors, and fine particles. Cathodoluminesence and charge collection are characterization methods essential for addressing issues such as materials uniformity, analysis of luminesence in wide bandgap materials, stress distributions in selective epitaxial growth, and degradation of optoelectronic devices. The SEM will have full variable temperature capability and microscopy and spectroscopy modes. Examples of researchproposed include selective area GaAs/Si, diamond films, SiC films and quantum well devices. Researchers and students from several of the departments at the University ofCalifornia-Los Angeles will make use of this instrument.

该奖项旨在表彰基于 SEM 的微观表征设施的开发，该设施具有针对电子材料研究优化的阴极发光和电荷收集功能。 将购买演示模型扫描电子显微镜以及用于阴极发光和电荷收集研究的组件。 当前的材料研究领域包括异质外延半导体、大带隙半导体和细颗粒的选择性区域生长。 阴极发光和电荷收集是解决材料均匀性、宽带隙材料发光分析、选择性外延生长中的应力分布以及光电器件退化等问题所必需的表征方法。 SEM 将具有完全可变温度功能以及显微镜和光谱模式。 提议的研究示例包括选择性区域 GaAs/Si、金刚石薄膜、SiC 薄膜和量子阱器件。 来自加州大学洛杉矶分校多个系的研究人员和学生将使用该仪器。