Presidential Young Investigator Award

总统青年研究员奖

• 批准号: 8957215
• 负责人: Nancy Haegel
• 金额: $ 31.52万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-07-01 至 1995-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8957215&HistoricalAwards=false
• 关键词: Presidential; Young; Investigator; Award

Dr. Haegel has been selected as a Presidential Young Investigator. She is active in research on optoelectronic properties of semiconductor materials, with emphasis on transient behavior and space charge-related effects in high resistivity materials. In this research program for the National Science Foundation she will pursue studies to include the following: (1) electrical transport and trasient phenomena in high resistivity materials, such as high purity materials at low temperature, semi-insulating gallium arsenide, or large bandgap materials, (2) transition from transport dominated by carrier lifetime to transport dominated by dielectric relaxation as a function of temperature, (3) effects of extended defects, and point defects on optical and electronic properties, (4) development of new techniqaues to characterize semiconductor thin films and heterostructures. The ultimate goal of the research is to acquire the knowledge and understanding necessary to study both optically and electrical induced transient effects in materials over a wide range of time scales to elucidate the dynamics of the interactions between free and trapped carriers and defects in semiconductors. The research is important for materials used in high=speed switches, fast detectors, isolating substrates for optoelectronic circuits, and future communications and computation systems.

Haegel博士被选为总统青年 调查员 她积极从事光电子学的研究 半导体材料的性质，重点是瞬态 高电阻率下的行为和空间电荷相关效应 材料. 在这个国家科学研究计划中， 基础，她将继续研究，包括以下内容：（1） 高电阻率下的电输运和瞬态现象 材料，例如低温下的高纯度材料， 半绝缘砷化镓或大带隙材料，（2） 从载流子寿命主导的输运过渡到 输运由介电弛豫主导， 温度，（3）扩展缺陷和点缺陷的影响 光学和电子性质，（4）开发新的 表征半导体薄膜的技术 异质结构 研究的最终目的是 获得必要的知识和理解，学习这两个 材料中的光电感应瞬态效应 在广泛的时间尺度，以阐明动态的 自由载流子和俘获载流子与缺陷之间的相互作用 半导体。 该研究对高速材料的研究具有重要意义 开关、快速检测器、光电隔离基板 电路，以及未来的通信和计算系统。