Presidential Young Investigator Award

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Dr. Haegel has been selected as a Presidential Young Investigator. She is active in research on optoelectronic properties of semiconductor materials, with emphasis on transient behavior and space charge-related effects in high resistivity materials. In this research program for the National Science Foundation she will pursue studies to include the following: (1) electrical transport and trasient phenomena in high resistivity materials, such as high purity materials at low temperature, semi-insulating gallium arsenide, or large bandgap materials, (2) transition from transport dominated by carrier lifetime to transport dominated by dielectric relaxation as a function of temperature, (3) effects of extended defects, and point defects on optical and electronic properties, (4) development of new techniqaues to characterize semiconductor thin films and heterostructures. The ultimate goal of the research is to acquire the knowledge and understanding necessary to study both optically and electrical induced transient effects in materials over a wide range of time scales to elucidate the dynamics of the interactions between free and trapped carriers and defects in semiconductors. The research is important for materials used in high=speed switches, fast detectors, isolating substrates for optoelectronic circuits, and future communications and computation systems.