Transient Electrical and Optical Behavior of High Resistivity Semiconductors (Materials Research)

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This is a Research Planning Grant in the Research Opportunities for Women Program. The objective of the proposed research is to use photo-hall effect analysis and electric field profiling techniques to study the time-, temperature-, and field- dependence of transport in high electrical resistivity semiconductors. This analysis is expected to provide a more fundamental understanding of transport behavior in these materials, and allow the effects of space charge relaxation, persistent photoconductivity, and deep level trapping to be distinguished. This work will advance the effort to properly analyze high resistivity material semiconductors, and will provide experimental data that can be compared to existing theoretical predictions. Important implications for electrical contacts to these high resistivity semicondctors can be expected, since space charge effects are always present in the near contact region.