Studies of the Surface Chemistry of GaAs Deposition with Surface Second Harmonic Generation

表面二次谐波沉积砷化镓的表面化学研究

• 批准号: 8815964
• 负责人: Edmund Seebauer
• 金额: $ 4.4万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-04-01 至 1990-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8815964&HistoricalAwards=false
• 关键词: Studies; Surface; Chemistry; GaAs; Deposition

Equipment is provided to test the applicability of surface second harmonic generation (SHG) to the study of surface diffusion. Diffusion of gallium, arsenic, and their alkyl and chloride compounds on silicon will be studied. The equipment includes a high-power short- pulse laser, a monochromator, and a piezoelectric translator. In SHG, the adsorption-sensitive yield of frequency-doubled laser light is detected in reflection from the surface. Because SHG has good spatial resolution (ca. 0.5 micron), it is particularly suited for measurements of surface diffusion, which plays a dominant role in many film-deposition processes.

提供设备以测试表面秒的适用性 谐波发生（SHG）的表面扩散的研究。 镓、砷及其烷基和氯化物的扩散 将对硅进行研究。 该设备包括一个大功率 短脉冲激光器、单色器和压电转换器。 在倍频中，倍频激光的吸附灵敏产额 光在从表面的反射中被检测到。 因为SHG有 良好的空间分辨率（ca. 0.5微米），它特别适合 对于表面扩散的测量，这在 许多薄膜沉积工艺。