Methods for Defect Manipulation in Semiconducting Oxides
Methods for Defect Manipulation in Semiconducting Oxides
批准号:
1306822
负责人:
Edmund Seebauer
金额:
$60.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-08-01 至 2018-07-31
中文摘要
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英文摘要
NON-TECHNICAL DESCRIPTION: The technologically useful properties of a ceramic material often depend upon the atomic defects contained in its crystalline structure. The present work seeks to further develop methods to control the concentration and movement of atomic defects in semiconducting ceramics such as titanium dioxide and zinc oxide. The methods are based upon manipulation of chemical bonds at the material surface or illumination by ultraviolet light. Control via these methods opens new possibilities for manipulating oxide defects in numerous applications. As specific examples, such control improves the properties of titanium dioxide as a photocatalyst for environmental water remediation and hydrogen production for renewable energy by water splitting, and as a component of catalysts for a wide variety of high-volume chemical production processes. The use of defect-manipulated catalysts to accelerate chemical reactions and to provide routes to new chemical products could further strengthen the competitive edge of the US chemical industry. Uses for high quality zinc oxide include transparent conducting electrodes for solar cells to produce renewable energy, and inexpensive green-blue optical emitters for consumer electronic devices.TECHNICAL DETAILS: This research project uses a combination of experiments and computations to quantify and model the mechanisms for surface-based defect manipulation in single-crystal titanium dioxide and zinc oxide, and to exploit those discoveries more fully in the synthesis of defect-engineered polycrystalline titanium dioxide for thin-film applications. Experiments with single crystals focus upon the measurement of oxygen diffusion as a marker for atomic defect behavior. Parallel experiments on thin films involve carefully controlled deposition of titanium dioxide by atomic layer techniques, followed by heating in controlled atmospheres of specific chemical composition, in some cases under ultraviolet photostimulation. Computations that support all this work entail refinement of a mathematical simulator software package for modeling defect behavior in titanium dioxide and zinc oxide based upon both experimental findings as well as quantum calculations that give atomic-scale insights. In addition to a graduate student, a substantial number of undergraduate researchers are involved directly in the research, providing important skills training in materials synthesis and characterization as well as chemical reaction measurements. This research is taking place in parallel with development of an industry-supported laboratory course for upper-division undergraduates and graduate students called "Chemistry and Transport in Semiconductor Materials Synthesis." In addition, several activities to promote the importance of ethics in science and engineering are being pursued.
期刊论文(2)
专著(0)
科研奖励(0)
会议论文
Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO2(1 1 0) surface
阐明 TiO2(1–1–0) 表面附近氧间隙原子的反应和扩散网络
DOI:
10.1016/j.apsusc.2018.11.123
发表时间:
2019
期刊:
Applied Surface Science
影响因子:
6.7
作者:
[Gilliard-AbdulAziz, Kandis Leslie, Seebauer, Edmund G.]
通讯作者:
Seebauer, Edmund G.
Electric Field Manipulation for Improved Rates of Photocatalysis by Mesoporous TiO 2
电场调控提高介孔 TiO 2 光催化速率
DOI:
10.1021/acs.jpcc.1c09020
发表时间:
2022
期刊:
The Journal of Physical Chemistry C
影响因子:
--
作者:
[Huang, Qilong, Seebauer, Edmund G.]
通讯作者:
Seebauer, Edmund G.
Harnessing Electrochemically-Injected Interstitial Atoms in Oxide Semiconductors for Doping and Purification
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批准号:2322121
-
项目类别:Continuing Grant
-
资助金额:$60.0万
-
财政年份:2023
-
负责人:Edmund Seebauer
-
依托单位:
Surface-Based Point Defect Manipulation in Semiconducting Oxides
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批准号:1709327
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项目类别:Continuing Grant
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资助金额:$64.0万
-
财政年份:2017
-
负责人:Edmund Seebauer
-
依托单位:
Surface- and Photo-Based Methods for Defect Manipulation in Semiconducting Oxides
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批准号:1005720
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项目类别:Continuing Grant
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资助金额:$40.5万
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财政年份:2010
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负责人:Edmund Seebauer
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依托单位:
New Methods for Defect Manipulation in Semiconducting Oxides
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批准号:0704354
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项目类别:Continuing Grant
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资助金额:$33.0万
-
财政年份:2007
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负责人:Edmund Seebauer
-
依托单位:
Surface Diffusion and Ordering Processes Exploited for Directed Self-Assembly Using Amorphous Semiconductors
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批准号:0203237
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项目类别:Continuing Grant
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资助金额:$25.8万
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财政年份:2002
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负责人:Edmund Seebauer
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依托单位:
Surface Diffusion on Semiconductors: Thermal and Beam-Enhanced
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批准号:9806329
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项目类别:Standard Grant
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资助金额:$28.0万
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财政年份:1998
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负责人:Edmund Seebauer
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依托单位:
Studies of Surface Diffusion on Semiconductor Materials
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批准号:9506419
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项目类别:Standard Grant
-
资助金额:$27.0万
-
财政年份:1995
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负责人:Edmund Seebauer
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依托单位:
Experimental Studies of Surface Diffusion on Semiconductor Materials
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批准号:9121917
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项目类别:Continuing Grant
-
资助金额:$23.75万
-
财政年份:1992
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负责人:Edmund Seebauer
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依托单位:
Studies of the Surface Chemistry of GaAs Deposition with Surface Second Harmonic Generation
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批准号:8815964
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项目类别:Standard Grant
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资助金额:$4.4万
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财政年份:1989
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负责人:Edmund Seebauer
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依托单位:
Presidential Young Investigators Award: Surface Chemistry In Semiconductor Thin Film Deposition
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批准号:8857037
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项目类别:Continuing Grant
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资助金额:$27.45万
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财政年份:1988
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负责人:Edmund Seebauer
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依托单位:
海外基金