Surface Diffusion on Semiconductors: Thermal and Beam-Enhanced

半导体表面扩散：热扩散和光束增强

• 批准号: 9806329
• 负责人: Edmund Seebauer
• 金额: $ 28万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-15 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9806329&HistoricalAwards=false
• 关键词: Surface; Diffusion; Semiconductors; Thermal; Beam

ABSTRACT Proposal Title: Surface Diffusion on Semiconductors -- Thermal and Beam Enhanced Proposal Number: CTS-9806329 Principal Investigators: Edmund G. Seebauer Institution: University of Illinois - Urbana - Champaign Prof. E. G. Seebauer proposes to study by Second Harmonic Microscopy and by molecular dynamics simulation the surface diffusion of adsorbed species on elemental and compound semiconductors like Si, Ge, GaAs and GaN. Additionally, he will study quantitatively the effects of photonic, ionic and electronic irradiation on the magnitude and direction of surface diffusion. The photon effects on the bulk diffusion will also be studied using ion depth profiling of shallow junctions. These studies are relevant to semiconductor industries, such as the electronic, optoelectronic, and microwave device manufacturers. In general, they augment knowledge valuable to several processing technologies, such as thin film deposition and epitaxial growth, plasma processing, lamp-heating, ion-assisted deposition; and to chemical technologies, such as particle sintering, film etching, and corrosion.

摘要 提案标题： 半导体表面扩散--热扩散 和Beam Enhanced提案编号： CTS-9806329主要研究者：Edmund G. Seebauer机构： 伊利诺伊大学厄巴纳-尚潘分校 E. G. Seebauer建议通过二次谐波显微镜和分子动力学模拟研究元素和化合物半导体（如Si，Ge，GaAs和GaN）上吸附物质的表面扩散。 此外，他将定量研究光子，离子和电子辐射对表面扩散的大小和方向的影响。体扩散的光子效应也将使用浅结的离子深度剖析进行研究。这些研究与半导体行业有关，例如电子，光电和微波器件制造商。一般来说，它们增加了对几种加工技术有价值的知识，如薄膜沉积和外延生长，等离子体加工，灯加热，离子辅助沉积;以及化学技术，如颗粒烧结，薄膜蚀刻和腐蚀。