Surface Diffusion on Semiconductors: Thermal and Beam-Enhanced

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ABSTRACT Proposal Title: Surface Diffusion on Semiconductors -- Thermal and Beam Enhanced Proposal Number: CTS-9806329 Principal Investigators: Edmund G. Seebauer Institution: University of Illinois - Urbana - Champaign Prof. E. G. Seebauer proposes to study by Second Harmonic Microscopy and by molecular dynamics simulation the surface diffusion of adsorbed species on elemental and compound semiconductors like Si, Ge, GaAs and GaN. Additionally, he will study quantitatively the effects of photonic, ionic and electronic irradiation on the magnitude and direction of surface diffusion. The photon effects on the bulk diffusion will also be studied using ion depth profiling of shallow junctions. These studies are relevant to semiconductor industries, such as the electronic, optoelectronic, and microwave device manufacturers. In general, they augment knowledge valuable to several processing technologies, such as thin film deposition and epitaxial growth, plasma processing, lamp-heating, ion-assisted deposition; and to chemical technologies, such as particle sintering, film etching, and corrosion.