Studies of Surface Diffusion on Semiconductor Materials

半导体材料表面扩散研究

• 批准号: 9506419
• 负责人: Edmund Seebauer
• 金额: $ 27万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1999-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9506419&HistoricalAwards=false
• 关键词: Studies; Surface; Diffusion; Semiconductor; Materials

Abstract Edmund Seebauer Surface diffusion on semiconductors is examined in this study using two experimental approaches and molecular dynamics. The previously developed applications of second harmonic microscopy (SHM) for study of low-coverage surface diffusion in Group IV semiconductors is broadened to include III-V and II-IV materials. This includes the first quantitative measurements of ion-enhanced surface diffusion. The effort focusses on wide bandgap materials which may show very pronounced ionic effects on surface diffusion. In addition, spatially unresolved second harmonic generation is used to test the general theory connecting surface diffusivities with reaction rate constants. Initial experiments involve chlorine on silicon (111). Extension to halogens or hydrogen on III-V or II-VI materials is planned if initial tests succeed. Finally, molecular dynamics simulations of the influence of adatoms on surface heterodiffusion are performed. This is a basic study of the fundamentals of surface diffusion. It has a broad range of potential relevance, including the processing of electronic materials, thin-film formation, heterogeneous catalysis, and corrosion protection. ***

Edmund Seebauer 半导体表面扩散研究在这项研究中使用两种实验方法和分子动力学。 二次谐波显微镜（SHM）的低覆盖率的表面扩散在第IV族半导体研究的先前开发的应用程序被拓宽到包括III-V和II-IV材料。 这包括离子增强表面扩散的第一次定量测量。 这项工作的重点是宽带隙材料，这可能会显示出非常显着的离子效应的表面扩散。 此外，空间未解决的二次谐波产生用于测试连接表面扩散系数与反应速率常数的一般理论。 最初的实验涉及硅上的氯（111）。 如果初步测试成功，计划在III-V或II-VI材料上扩展卤素或氢。最后，分子动力学模拟吸附原子对表面异质扩散的影响。 这是对表面扩散基本原理的基础研究。 它具有广泛的潜在相关性，包括电子材料的加工，薄膜形成，多相催化和腐蚀防护。 ***