Ultrafast High Intensity Optical Effects in New II-VI Compound Semiconductor Microstructures

该项目涉及利用超快激光技术研究高光激发半导体微结构，基于新II-VI化合物超晶格和量子阱制造的最新进展。这些微结构在光谱的可见区域具有光学共振，特别是在半导体光电子技术目前非常不发达的蓝绿色区域。基于对高激发非平衡电子-空穴等离子体和激子复合物物理的微观理解，这项工作有望对高速光开关和发光器件的开发产生直接影响。要研究的微观结构的一个特殊特征是以高度空间可控的方式结合磁性元素。这将从微观结构的磁有序的快速光诱导变化的角度进行研究，以期在磁光器件中利用这种现象。

This project involves studies by ultrafast laser techniques of highly optically excited semiconductor microstructures, based on very recent advances in the fabrication of new II-VI compound superlattices and quantum wells. These microstructures have their optical resonances in the visible region of the spectrum, especially in the blue-green where semiconductor optoelectronics technology is presently very poorly developed. The work is expected to have direct impact in developing high speed optical switching and light emitting devices, based on miroscopic understanding of the physics of highly excited nonequilibrium electron-hole plasmas and excitonic complexes. A particular feature of the microstructures to be studied is the incorporation of magnetic elements in a highly spatially controllable fashion. This will be investigated from the standpoint of fast optically induced changes in magnetic ordering of the microstructures, with a view towards exploiting such phenomena in magneto-optical devices.