Vertical Cavity Blue and Ultraviolet Light Emitters

垂直腔蓝光和紫外光发射器

• 批准号: 0070887
• 负责人: Arto Nurmikko
• 金额: $ 24万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-09-01 至 2004-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0070887&HistoricalAwards=false
• 关键词: Vertical; Cavity; Blue; Ultraviolet; Light

0070887NurmikkoIn this project, Nurmikko, his graduate students, and collaborators aim to study, design, and develop optoelectronic device and optical physics concepts that will lead to the realization of blue and ultraviolet vertical cavity light emitters, based on wide band gap nitride semiconductor heterostructures. In particular, the specific goals of the three year program are the demonstration and fabrication of (a) a resonant cavity light emitting diode (RCLED), and (b) a vertical cavity surface emitting laser (VCSEL). Although closely interconnected, the technical challenges facing the development of these new, compact short wavelength devices can be logistically grouped into into two broad areas: (i) the approach and implementation of the optical microresonator structure and (ii) the design and realization of a pn-junction based injector structure. To achieve high Q-factor vertical cavities for InGaN and AlGaN heterostructures, Nurmikko and co-workers aim is to create processing techniques that will create optical structures reaching Q-factors in the 1000-2000 range for reducing the laser threshold requirements. The approach is based on monolithic integration of two dielectric DBRs and also focus on "hybrid" structures with one dielectric and one as-grown DBR. Study of the optical gain spectra of the VCSEL structures forms another key project area, to detail the gain spectra of the InGaN and AlGaN active media for optimizing these for low threshold VCSELS. Nurmikko and co-workers will study fundamental microcavity physics to enhance light emission from InGaN and AlGaN VCSELs and RCLEDS. Excitonic enhancement to oscillator strength can concentrate optical gain so as to significantly reduce a nitride VCSEL threshold. Similarly, spontaneous emission properties for an RCLED are expected to be dramatically enhanced.For achieving a diode vertical cavity emitter, Nurmikko and co-workers will study lateral p-injection in two types of experiments: (i) the use of near field imaging techniques to study lateral diffusion, and (ii) the design of LED microstructures where current spreading can be obtained from electroluminescence spatial imaging. For the blue and NUV VCSEL work they will also concentrate on the incorporation of p-GaN/AlGaN modulation doped heterostructures for enhancing the p-side conductivity. One of the specific features that they will address concerns the tailoring of the electronic structure so that interface scattering can be reduced (hence the hole mobility enhanced). They propose to use the very large built-in piezoelectric and spontaneous dielectric polarization effects to electrostatically design the heterojunction confinement profile. They will also study the use of epitaxial lateral overgrowth (ELOG) to facilitate both the incorporation of "buried" DBR mirrors as well as to define current apertures for channeling hole transport to the active device region (as defined by the vertical resonator).A specific characteristic of the ongoing research is a close collaboration with Hewlett-Packard (both HP Labs and the Optoelectronic Division, now renamed Agilent Technologies), as well as Sandia National Laboratories. This industry/government laboratory connection will be an integral part of the project work.***

在这个项目中，Nurmikko，他的研究生和合作者的目标是研究，设计和开发光电器件和光学物理概念，这将导致实现基于宽带隙氮化半导体异质结构的蓝色和紫外线垂直腔光发射器。特别是，三年计划的具体目标是演示和制造(a)谐振腔发光二极管（rced）和(b)垂直腔面发射激光器（VCSEL）。尽管紧密相连，但这些新型紧凑型短波器件开发面临的技术挑战可以在逻辑上分为两大领域：(i)光学微谐振器结构的方法和实现，以及（ii）基于pn结的注入器结构的设计和实现。为了实现InGaN和AlGaN异质结构的高q因子垂直腔，Nurmikko和同事的目标是创建加工技术，以创建达到1000-2000范围内q因子的光学结构，以降低激光阈值要求。该方法基于两个介电DBR的单片集成，并关注一个介电DBR和一个生长DBR的“混合”结构。VCSEL结构的光学增益光谱研究形成了另一个关键项目领域，详细介绍了InGaN和AlGaN活性介质的增益光谱，以优化低阈值VCSEL。Nurmikko和同事将研究基本的微腔物理，以增强InGaN和AlGaN VCSELs和RCLEDS的光发射。激子增强振荡强度可以集中光增益，从而显著降低氮化物VCSEL阈值。同样，循环材料的自发发射特性也有望得到显著提高。为了实现二极管垂直腔发射器，Nurmikko和同事将在两种类型的实验中研究横向p注入：(i)使用近场成像技术研究横向扩散，以及（ii） LED微结构的设计，其中电流扩散可以通过电致发光空间成像获得。对于蓝色和NUV VCSEL工作，他们还将专注于p-GaN/AlGaN调制掺杂异质结构的结合，以提高p侧电导率。他们将解决的一个具体特征是电子结构的裁剪，以便减少界面散射（从而增强空穴迁移率）。他们提出利用非常大的内置压电和自发介电极化效应来静电设计异质结约束剖面。他们还将研究外延横向过度生长（ELOG）的使用，以促进“埋藏”DBR反射镜的结合，并定义电流孔径，以便将空穴传输到有源器件区域（由垂直谐振器定义）。正在进行的研究的一个具体特点是与惠普（包括惠普实验室和光电部门，现在更名为安捷伦技术）以及桑迪亚国家实验室密切合作。这个行业/政府实验室的连接将是项目工作的一个组成部分