课题基金 / 基金详情

The Role of Defects in Epitaxy

The Role of Defects in Epitaxy
缺陷在外延中的作用
批准号:
8919457
负责人:
Philip Cohen
金额:
$36.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-02-15 至 1993-07-31
关键词:

项目摘要

项目成果

Philip Cohen的其他基金

相似基金

相关文献

中文摘要
翻译
本研究的目的是利用反射高能电子衍射来研究缺陷在化合物半导体外延生长中的作用,例如砷化镓。主要集中在表面结构和形貌对生长过程的影响。该程序包括研究台阶的稳定性和邻近表面的扭结,晶格失配薄膜中应变的松弛,杂质对表面结构和台阶传播的影响,以及反射高能电子衍射过程的继续改进。
英文摘要
The objective of the research is to use reflection high energy electron diffraction to study the role of defects in epitaxial growth of compound semiconductors, for example, gallium arsenide. The primary focus is on the effects of surface structured and morphology on the growth process. The program includes studies of stability of steps and kinks on vicinal surfaces, relaxation of strain in lattice mismatched films, effects of impurities on surface structure and propagation of steps, and continued improvement of the reflection high energy electron diffraction process.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Elucidation of mechanisms that restrict the activation of Toll-Like Receptors and the IL-1 receptor to prevent inflammatory and autoimmune diseases
  • 批准号:
    MR/R021406/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $208.91万
  • 财政年份:
    2018
  • 负责人:
    Philip Cohen
  • 依托单位:
Characterisation of signal transduction pathways that restrict activation of the innate immune system to prevent inflammatory and autoimmune diseases
  • 批准号:
    MR/K000985/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $185.54万
  • 财政年份:
    2013
  • 负责人:
    Philip Cohen
  • 依托单位:
Collaborative Research: Impurity Incorporation into Epitaxial Graphene on SiC
  • 批准号:
    1206793
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $21.6万
  • 财政年份:
    2012
  • 负责人:
    Philip Cohen
  • 依托单位:
TX BRIDGE (Texans Building Robust, Innovative & Diverse Graduate Education)
  • 批准号:
    1111129
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2011
  • 负责人:
    Philip Cohen
  • 依托单位:
海外基金