The Role of Defects in Epitaxy
The Role of Defects in Epitaxy
批准号:
8919457
负责人:
Philip Cohen
金额:
$36.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-02-15 至 1993-07-31
中文摘要
本研究的目的是利用反射高能电子衍射来研究缺陷在化合物半导体外延生长中的作用,例如砷化镓。主要集中在表面结构和形貌对生长过程的影响。该程序包括研究台阶的稳定性和邻近表面的扭结,晶格失配薄膜中应变的松弛,杂质对表面结构和台阶传播的影响,以及反射高能电子衍射过程的继续改进。
英文摘要
The objective of the research is to use reflection high energy electron diffraction to study the role of defects in epitaxial growth of compound semiconductors, for example, gallium arsenide. The primary focus is on the effects of surface structured and morphology on the growth process. The program includes studies of stability of steps and kinks on vicinal surfaces, relaxation of strain in lattice mismatched films, effects of impurities on surface structure and propagation of steps, and continued improvement of the reflection high energy electron diffraction process.
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批准号:MR/R021406/1
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财政年份:2013
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依托单位:
Collaborative Research: Impurity Incorporation into Epitaxial Graphene on SiC
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批准号:1206793
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项目类别:Continuing Grant
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资助金额:$21.6万
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财政年份:2012
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负责人:Philip Cohen
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依托单位:
TX BRIDGE (Texans Building Robust, Innovative & Diverse Graduate Education)
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批准号:1111129
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2011
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负责人:Philip Cohen
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依托单位:
A National Centre for Protein Kinase Profiling
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批准号:MC_EX_G0800765
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项目类别:Research Grant
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资助金额:$123.77万
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财政年份:2008
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负责人:Philip Cohen
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依托单位:
Management Matters: Consequences of Managerial Composition
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批准号:0647265
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项目类别:Standard Grant
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资助金额:$13.98万
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财政年份:2007
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负责人:Philip Cohen
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依托单位:
Collaborative: Mechanisms of resonant IR photodesorption of adsorbates from surfaces
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批准号:0707361
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Philip Cohen
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依托单位:
Microscopic Mechanisms of III-Nitride Growth
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批准号:0074675
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项目类别:Standard Grant
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资助金额:$38.69万
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财政年份:2000
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负责人:Philip Cohen
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依托单位:
Dynamical Processes of Epitaxial Growth
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批准号:9618656
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项目类别:Standard Grant
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资助金额:$37.34万
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财政年份:1997
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负责人:Philip Cohen
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依托单位:
U.S.-Japan Seminar on Surface Dynamics and Structures in Epitaxial Growth
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批准号:9513121
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项目类别:Standard Grant
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资助金额:$2.2万
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财政年份:1996
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负责人:Philip Cohen
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依托单位:
Atomic Level Control of Epitaxy
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批准号:9307852
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项目类别:Standard Grant
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资助金额:$35.0万
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财政年份:1993
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负责人:Philip Cohen
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依托单位:
U.S.-Japan Seminar: Surface Characterization by Electron Diffraction, REM, and Holography/March 1993/Honolulu, Hawaii
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批准号:9116623
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项目类别:Standard Grant
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资助金额:$1.36万
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财政年份:1992
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负责人:Philip Cohen
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依托单位:
Reflection High Energy Electron Diffraction Equipment
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批准号:9007100
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项目类别:Standard Grant
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资助金额:$4.93万
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财政年份:1990
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负责人:Philip Cohen
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依托单位:
Diffraction Studies of Epitaxy
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批准号:8615207
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项目类别:Continuing Grant
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资助金额:$28.35万
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财政年份:1987
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负责人:Philip Cohen
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依托单位:
Reflection High-Energy Electron Diffraction Studies of Epitaxial Growth (Materials Research)
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批准号:8319821
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项目类别:Continuing Grant
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资助金额:$17.62万
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财政年份:1984
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负责人:Philip Cohen
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依托单位:
海外基金