Presidential Young Investigator Award

阿特沃特博士被选为总统青年研究员。他积极从事利用离子束技术研究半导体材料的基础研究。在国家科学基金的研究计划中，他将从事以下研究：(1)研究离子束碰撞级联与界面的相互作用，(2)研究半导体、金属和合金薄膜中界面的运动随离子束级联密度的变化，(3)级联过程中晶体生长的测量和计算机模拟，(4)硅的稳定性和晶体/非晶相变随临界离子通量和温度的研究，(5)硅/气相界面非晶相均匀成核的临界条件的研究。这项拨款的研究将对电子学和光电子技术产生影响。与工业的互动是总统青年研究员补助金所固有的，这将对这项关键技术的国家竞争力产生影响。

Dr. Atwater has been selected as Presidential Young Investigator. He is active in fundamental research on the use of ion beam techniques to study semiconducting materials. In the research program for the National Science Foundation he will pursue studies to include the following: (1) study of the interaction of a ion beam collision cascade with interfaces, (2) study of motion of interfaces in semiconductor, metal, and alloy thin films as a function of ion beam cascade density, (3) measurement and computer simulation (using molecular dynamics techniques) of grain growth during cascade events, (4) study of stability and crystal/amorphous phase transformations as a function of critical ion flux and temperature for silicon, (5) study of critical conditions for homogeneous nucleation of the amorphous phase for silicon/vapor interfaces. The research in this grant will have an impact on electronics and opto-electronic technology. The interactions with industry which are inherent with Presidential Young investigator grants will have implications for national competitiveness in this critical technology.