Epitaxial Growth and Properties of New Group IV Semiconductor Alloys

新型 IV 族半导体合金的外延生长和性能

• 批准号: 9503210
• 负责人: Harry Atwater
• 金额: $ 28.35万
• 依托单位: California Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-06-15 至 1998-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9503210&HistoricalAwards=false
• 关键词: Epitaxial; Growth; Properties; New; Group

9503210 Atwater This research aims at a definitive assessment of the synthesis, structure and electronic structure of a class of Group IV semiconductor alloys containing tin. New approaches to alloy synthesis will be explored to overcome thermodynamic and kinetic limits to growth of homogeneous, single-crystal, Sn-based group IV semiconductor alloys. Two types of epitaxial heterostructures are of interest: Binary alloys with large misfit relative to silicon grown either in thick strain-relieved layers or thin, coherently strained layers; and alloys where atomic size differences enable local strain compensation and low misfit relative to silicon. First principles electronic structure calculations in the local density approximation will be performed to enable determination of which structures are stable and to obtain energy band structures of strained and unstrained Sn-based alloys. Information from the electronic structure calculations will be used to construct force fields for molecular dynamics simulations of Sn incorporation using energetic beams. Measurements of electronic and optical properties (e.g. optical energy gap, carrier mobilities and carrier concentrations) of single crystal alloy films will be compared to calculated electronic and optical properties. %%% This program will be the first comprehensive investigation of a new class of materials whose electronic properties may result in the integration of new functional heterojunction electronic and optoelectronic materials and devices on silicon substrates. Because of the pervasiveness of silicon integrated circuit technology and its enormous economic importance, the technological impact of the proposed program is potentially very large. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. ***

小行星9503210 本研究的目的是在一个明确的评估一类IV族含锡半导体合金的合成，结构和电子结构。 合金合成的新方法将被探索，以克服热力学和动力学的限制，生长均匀，单晶，锡基IV族半导体合金。 两种类型的外延异质结构是感兴趣的：二元合金与大的失配相对于硅生长在厚的应变缓解层或薄的，相干应变层;和合金的原子大小的差异，使局部应变补偿和低失配相对于硅。 第一原理电子结构计算的局部密度近似将被执行，以确定哪些结构是稳定的，并获得应变和非应变Sn基合金的能带结构。从电子结构计算的信息将被用来构建力场的分子动力学模拟Sn掺入使用高能束。 单晶合金膜的电子和光学性质（例如光学能隙，载流子迁移率和载流子浓度）的测量将与计算的电子和光学性质进行比较。该计划将是对一类新材料的首次全面调查，其电子特性可能导致在硅衬底上集成新的功能异质结电子和光电材料和器件。 由于硅集成电路技术的普及及其巨大的经济重要性，拟议计划的技术影响可能非常大。 该计划的一个重要特点是在材料研究的基础和技术重要领域对学生进行培训。***