Nanotechnology: Silicon Nanoparticle Engineering for Novel Memory and Logic Applications
纳米技术:用于新型内存和逻辑应用的硅纳米颗粒工程
基本信息
- 批准号:9871850
- 负责人:
- 金额:$ 56万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1998
- 资助国家:美国
- 起止时间:1998-08-01 至 2001-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
9871850 Atwater This objectives of this project are to develop the synthesis, processing, manipulation and characterization tools to enable and improve novel, emerging silicon nanoparticle memory and logic devices. These devices exploit common approaches for particle synthesis, manipulation, interface passivation and electrical and optical characterization of ordered, passivated arrays of size-classified silicon nanoparticles which are integrated into larger device structures. Device structures to be addressed in this project include: a nonvolatile memory based on discrete charge storage on the nanoparticle floating gate of a field-effect transistor, and a silicon nanoparticle-based implementation for a cellular automata wire/logic gate, in which information is propagated by cell-cell electrostatic interactions rather than by current flow. The nanoparticle engineering and assembly methods developed in this program may enable the first realization of a cellular automata logic gate capable of room temperature operation. Key aspects of the synthesis and processing are engineering of nanoparticle size, shape, dielectric passivation thickness and stoichiometry, and control of nanoparticle position. Control of position is achieved in model device structures using force manipulation by a scanning probe microscope. Another effort is aimed at utilizing fluid and colloidal forces to fabricate ordered linear and planar arrays. Characterization of charge state and morphology at the single particle level is performed using conducting tip atomic force microscopy. %%% The project addresses basic research issues in a topical area of science and engineering having high technological relevance. The research will contribute new knowledge at a fundamental level to important aspects of electronic devices. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. This research grant is made under the Nanotechnology Initiative (NSF 98-20), and is co-funded by the Directorate for Engineering, the Directorate for Computer and Information Science and Engineering, and the Directorate for Mathematical and Physical Sciences. The research team is a university/industry/government lab collaboration between Applied Physics and Chemical Engineering faculty at the California Institute of Technology, and technical staff at Bell Labs/Lucent Technologies and the Jet Propulsion Laboratory.
9871850本项目的目标是开发合成、加工、操作和表征工具,以实现和改进新颖的、新兴的硅纳米颗粒存储和逻辑器件。这些器件利用通用方法进行颗粒合成、操纵、界面钝化以及有序、钝化的尺寸分类硅纳米颗粒阵列的电学和光学表征,这些纳米颗粒集成到更大的器件结构中。本项目要解决的器件结构包括:基于场效应晶体管纳米颗粒浮动栅上的离散电荷存储的非易失性存储器,以及基于硅纳米颗粒的元胞自动机导线/逻辑门的实现,其中信息通过细胞间的静电相互作用而不是通过电流传播。该计划中开发的纳米粒子工程和组装方法可能使能够在室温下运行的元胞自动机逻辑门首次实现。合成和加工的关键方面是纳米颗粒的尺寸、形状、介质钝化厚度和化学计量比的工程设计,以及纳米颗粒位置的控制。通过扫描探针显微镜的力操纵,在模型器件结构中实现位置控制。另一项工作是利用流体和胶体力来制造有序的线性和平面阵列。利用导电针尖原子力显微镜对单粒子水平上的电荷状态和形貌进行了表征。该项目致力于具有高度技术相关性的科学和工程专题领域的基础研究问题。这项研究将在基础水平上为电子设备的重要方面贡献新的知识。从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础,从而有助于提高先进器件的性能。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训,将研究和教育结合起来。这项研究资助是在纳米技术倡议(NSF 98-20)下提供的,由工程局、计算机和信息科学与工程局以及数学和物理科学局共同资助。该研究团队是由加州理工学院的应用物理和化学工程系,以及贝尔实验室/朗讯技术公司和喷气推进实验室的技术人员组成的大学/行业/政府实验室合作小组。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Harry Atwater其他文献
Why Do Basic Research? And Why Double It?
- DOI:
10.1557/mrs2000.232 - 发表时间:
2011-01-31 - 期刊:
- 影响因子:4.900
- 作者:
Harry Atwater - 通讯作者:
Harry Atwater
Harry Atwater的其他文献
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{{ truncateString('Harry Atwater', 18)}}的其他基金
I-Corps: Scalable, Highly Efficient Power-generating Windows: the Future of Urban Buildings
I-Corps:可扩展、高效的发电窗户:城市建筑的未来
- 批准号:
1939894 - 财政年份:2019
- 资助金额:
$ 56万 - 项目类别:
Standard Grant
I-Corps: Effectively transparent contacts for solar applications
I-Corps:太阳能应用的有效透明接触
- 批准号:
1806148 - 财政年份:2018
- 资助金额:
$ 56万 - 项目类别:
Standard Grant
Active Plasmonic Materials and Devices
活性等离子体材料与器件
- 批准号:
0606472 - 财政年份:2006
- 资助金额:
$ 56万 - 项目类别:
Standard Grant
Student Travel for 2nd International Conference on Cat-CVD (Hot Wire CVD); Denver, CO
第二届 Cat-CVD 国际会议(Hot Wire CVD)的学生旅行;
- 批准号:
0237714 - 财政年份:2002
- 资助金额:
$ 56万 - 项目类别:
Standard Grant
Engineered Nanoparticle Electronic and Photonic Device Materials
工程纳米粒子电子和光子器件材料
- 批准号:
0103543 - 财政年份:2001
- 资助金额:
$ 56万 - 项目类别:
Standard Grant
Development of a Quantitative Electrostatic Force Microscope
定量静电力显微镜的研制
- 批准号:
0076486 - 财政年份:2000
- 资助金额:
$ 56万 - 项目类别:
Standard Grant
MRSEC: Center for the Science and Engineering of Materials (CSEM)
MRSEC:材料科学与工程中心 (CSEM)
- 批准号:
0080065 - 财政年份:2000
- 资助金额:
$ 56万 - 项目类别:
Cooperative Agreement
Epitaxial Growth and Properties of New Group IV Semiconductor Alloys
新型 IV 族半导体合金的外延生长和性能
- 批准号:
9503210 - 财政年份:1995
- 资助金额:
$ 56万 - 项目类别:
Continuing Grant
Engineering Research Equipment: A Slow Scan CCD-based Video System for Image and Diffraction Analysis
工程研究设备:基于慢扫描 CCD 的图像和衍射分析视频系统
- 批准号:
9311156 - 财政年份:1993
- 资助金额:
$ 56万 - 项目类别:
Standard Grant
Reflection High Energy Electron Spectroscopy during Epitaxial Growth
外延生长过程中的反射高能电子能谱
- 批准号:
9202587 - 财政年份:1992
- 资助金额:
$ 56万 - 项目类别:
Continuing Grant
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