Reflection High Energy Electron Spectroscopy during Epitaxial Growth

外延生长过程中的反射高能电子能谱

• 批准号: 9202587
• 负责人: Harry Atwater
• 金额: $ 45.91万
• 依托单位: California Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1995-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202587&HistoricalAwards=false
• 关键词: Reflection; Energy; Electron; Spectroscopy; during

A fundamental investigation of reflection electron energy loss spectroscopy in conjunction with epitaxial growth will be conducted. In situ measurement of core loss ionization and electron energy loss fine structure will be performed during thin film growth by molecular beam epitaxy. These measurements will enable investigation of surface dynamical phenomena during growth, such as surface segregation and relaxation of local order in films at the monolayer level. Of particular interest are the relation etween cation-anion flux ration, surface composition and surface reconstruction for group III-V semiconductor surfaces, and relaxation of local order at group IV(e.g., Si, Ge, Sn) alloy surfaces. Development of a data-parallel ultrahigh vacuum spectrometer will enable increases in data acquisition speed by approximatel;y 2-3 orders of magnitude. %%% This research will investigate a new method for compositional and stuctural analysis of thin films during the actual growth process. Potential benefits include the ability to achieve atomic level control over thin film composition, and semiconductor materials with novel properties and performance for use in advanced electronic and photonic devices and integrated circuits.

反射电子能量的基础研究 与外延生长结合的损耗谱将 进行。 磁芯损耗电离的现场测量 电子能量损失精细结构 在通过分子束外延的薄膜生长期间。 这些 测量将使调查的表面动力学 生长过程中的现象，如表面偏析和 在单层水平上的薄膜中的局部秩序的松弛。 特别感兴趣的是阳离子-阴离子之间的关系 通量比、表面组成和表面重构 对于III-V族半导体表面， IV组的局部顺序（例如，Si、Ge、Sn）合金表面。 一种数据并行并行存储器的研制 光谱仪将能够增加数据采集 速度约为2-3个数量级。 %%% 本研究将探索一种新的方法， 薄膜的成分和结构分析 实际的成长过程。 潜在的好处包括 在薄膜上实现原子级控制的能力 组合物，以及具有新颖的 用于先进电子设备的性能和性能 以及光子器件和集成电路。