Student Travel for 2nd International Conference on Cat-CVD (Hot Wire CVD); Denver, CO

第二届 Cat-CVD 国际会议（Hot Wire CVD）的学生旅行；

• 批准号: 0237714
• 负责人: Harry Atwater
• 金额: $ 0.5万
• 依托单位: California Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-10-01 至 2003-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0237714&HistoricalAwards=false
• 关键词: Student; Travel; 2nd; International; Conference

A conference on Cat-CVD (Hot-Wire CVD) Processing, http://www.nrel.gov/cat-cvd2/ , will be held in Denver, CO September 10-13, 2002. The conference objective is to provide a forum for discussion to assess and understand the deposition of Si and other thin film related materials by the Cat-CVD (Hot-Wire CVD) process, to address deposition related processing issues, and investigate new applications which may lead to industrial utilization of this rapidly maturing technology. The program is organized as a workshop-style conference to provide an interdisciplinary forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. Objectives are to stimulate communications among the community of researchers addressing Hot-Wire CVD Processing and its relationship to technology. A variety of disciplinary backgrounds-chemistry, physics, engineering and materials science, is represented and contrributes positively to the intellectual content of the Conference. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, government research institutions, and industry.%%%An evaluation of the progress and status of Hot-Wire CVD Processing and related device issues along with current assessments of the most important developments will be of significant value to the understanding and enhanced utilization of electronic materials in computing, data processing, and communications. To promote and sustain the growth of such technologies, it is vital to attract the support, enthusiasm, and interest of young researchers and students. To this end, sessions will be held sequentially, and special efforts made to ensure information exchange in an informal setting. Leading scientists in the Si field have committed to attend the conference, so there will be opportunity for interactions between researchers of all levels of experience in Cat-CVD. ***

关于Cat-CVD（热线CVD）处理的会议，http://www.nrel.gov/cat-cvd2/，将于2002年9月10日至13日在科罗拉多州丹佛市举行。会议的目的是提供一个讨论的论坛，以评估和理解通过Cat-CVD（热线CVD）工艺沉积Si和其他薄膜相关材料，解决与沉积相关的处理问题，并研究可能导致这种快速成熟技术的工业利用的新应用。该计划以研讨会形式组织，为器件工程师，固态物理学家和材料科学家提供跨学科论坛，通过邀请和贡献的演讲正式讨论共同感兴趣的主题，并在包括海报展示会议在内的各种活动中非正式地讨论。目标是促进研究人员解决热线CVD加工及其与技术的关系社区之间的沟通。各种学科背景，化学，物理，工程和材料科学，是代表和contributes积极的知识内容的会议。沿着评估该领域和未来方向的机会，预计大学、政府研究机构和工业界之间将建立新的联系。%对热丝CVD工艺的进展和现状以及相关器件问题的评估沿着对当前最重要的发展的评估将对理解和提高电子材料在计算、数据处理和通信中的利用具有重要价值。为了促进和维持这些技术的发展，吸引年轻研究人员和学生的支持、热情和兴趣至关重要。为此目的，各届会议将按顺序举行，并将作出特别努力，确保在非正式场合交流信息。硅领域的领先科学家已承诺参加会议，因此将有机会在Cat-CVD经验的各级研究人员之间进行互动。***