Defect Structure of Indium Phosphide Alloy Thin Films and Heterostructures

该研究是西北大学（DMR-8701167）的一项高效赠款的更新。在国家自然科学基金资助的三年中，有2名学生获得博士学位，1名学生获得硕士学位，3名学生正处于博士学位的不同阶段。七篇论文已被认可在科学期刊上发表，另有七篇正在进行中。这一时期的研究重点是：(1)化合物半导体中的过渡和稀土金属的电子活性缺陷；(2)磷化铟及其合金的流动调制外延；(3)磷化铟基异质结构的缺陷。本文主要研究了常压有机金属气相外延法制备的故意掺杂磷化铟及其合金的深层缺陷。许多缺陷现象被强调，例如，重掺杂材料中的补偿机制，与取代杂质相关的深供体能级，量子阱和超晶格中的深能级，以及与稀土相关的杂质。利用光致发光、光电导率和深能级瞬态光谱对材料进行了表征。

The research is a renewal of a highly productive grant at Northwestern University (DMR-8701167). During the three years of support by the National Science Foundation two students were awarded the doctorate degree, one received the masters degree, and three students are in various stages of the doctorate degree. Seven papers were accepted for publication in refereed scientific journals, and seven more are in process. The research during that period emphasized the following: (1) transition and rare earth metals as electronically active defects in compound semiconductors, (2) flow modulation epitaxy of indium phosphide and its alloys, (3) defects in indium phosphide based heterostructures. The current research studies deep level defects in deliberately doped epitaxial indium phosphide and its alloys prepared by atmospheric pressure organometallic vapor phase epitaxy. A number of defect phenomena are being emphasized, for example, compensation mechanisms in heavily doped material, deep donor levels associated with substitutional impurities, deep levels in quantum wells and superlattices, and rare earth related impurities. The materials are being characterized using photoluminescence, photoconductivity, and deep level transient spectroscopy.