Defect Structure of Epitaxial Indium Phosphide and Its Alloys
Defect Structure of Epitaxial Indium Phosphide and Its Alloys
批准号:
8701167
负责人:
Bruce Wessels
金额:
$29.68万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1987
资助国家:
美国
项目状态:
已结题
起止时间:
1987-05-15 至 1990-10-31
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依托单位:
Nonlinear photonic crystal devices
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批准号:0801684
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项目类别:Standard Grant
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资助金额:$33.0万
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财政年份:2008
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依托单位:
Dynamic Response of Epitaxial Ferroelectric Thin Films
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批准号:0605292
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依托单位:
Non-Linear Optical Waveguide Devices for Nanophotonics
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Synthesis, Structure and Magnetic Properties of III-V Ferromagnetic Semiconductors
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批准号:0511523
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Bruce Wessels
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依托单位:
Spin Electronics: High Temperature Ferromagnetic Semiconductor Materials and Devices
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批准号:0224210
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项目类别:Standard Grant
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资助金额:$40.0万
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负责人:Bruce Wessels
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Ultra-High-Capacity Optical Communications and Networking: Integrated Guided Wave Devices for Terabit per Second Optical Communications
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GOALI: Defect Structure of Epitaxial Wide Gap III-V Semiconductors
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财政年份:1997
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负责人:Bruce Wessels
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依托单位:
Radiative and Non-radiative Centers in Indium Phosphide Alloy Thin Films and Heterostructures
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批准号:9302357
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项目类别:Continuing Grant
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财政年份:1993
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依托单位:
Defect Structure of Indium Phosphide Alloy Thin Films and Heterostructures
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批准号:9003114
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项目类别:Continuing Grant
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资助金额:$36.6万
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财政年份:1990
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负责人:Bruce Wessels
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依托单位:
Defect Structure of Epitaxial Indium Phosphide and Its Alloys (Materials Research)
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批准号:8407247
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资助金额:$21.2万
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财政年份:1984
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负责人:Bruce Wessels
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依托单位:
Vapor Phase Epitaxial Indium Phosphide Thin Films
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财政年份:1981
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负责人:Bruce Wessels
-
依托单位:
海外基金