A Study of Rare-Earth Doped Semiconductors and Novel Laser Structures

稀土掺杂半导体和新型激光器结构的研究

• 批准号: 9014069
• 负责人: Pallab Bhattacharya
• 金额: $ 18.5万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-04-01 至 1995-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9014069&HistoricalAwards=false
• 关键词: Study; Rare; Earth; Doped; Semiconductors

This award is to support rare-earth doping of semiconductors for the possibility of realizing novel types of optoelectronic devices and sources. The wavelength of the rare-earth related 4f emissions practically does not depend on the bandgap energy of the host crystal and is immune to temperature variations. However, the gain of the lasers is not high and the rare- earth doping and excitation process is not clearly understood. We propose a systematic investigation of GaAs and InP-based semiconductors - mainly GaAs and InGaAsP - doped during MBE by Er and by implantation of Yb. The experiments will include time-resolved luminescence with both resonant and non-resonant excitation, conductance and admittance spectroscopy to characterize deep levels, low and high field transport and reflectance measurements. It is expected that these experiments will improve the basic understanding of the doping process, changes in the material radiative and non-radiative properties, and the temporal characteristics of the rare-earth related transitions. The latter are particularly important for the design of high-speed pulsed lasers. The PI also proposes the use of rare-earth doped materials in a couple of novel laser structures. In the first the active medium is a selectively doped MQW with narrow rare-earth doped wells. In the second, a cascade of avalanching carriers is made to resonate with the rare-earth transition energy, thereby causing a large non- equilibrium distribution through collision excitation.

这个奖项是为了支持稀土 半导体掺杂 实现新类型的可能性 光电子器件和 源 的波长 稀土相关4f辐射 实际上并不取决于 基质晶体的带隙能量 而且不受温度的影响 变化. 然而， 激光的强度并不高， 稀土掺杂激发法 并不清楚。 我们 建议进行系统调查 GaAs和InP基半导体 - 主要是GaAs和InGaAsP掺杂 在Er和注入MBE期间， 的Yb。 实验将包括 时间分辨发光 谐振和非谐振 激发、电导和 导纳谱 表征深层次，低， 高场传输和反射 测量. 预计在 这些实验将改善 对兴奋剂的基本认识 工艺、材料变化 辐射和非辐射 属性，以及时间 稀土特性 相关过渡。 后者 尤为重要 高速脉冲激光器的设计。 PI还建议使用 稀土掺杂材料， 几种新颖的激光器结构。 在第一种情况下，活性介质是 选择性掺杂多量子阱 稀土掺杂的威尔斯阱。 在 第二，雪崩的级联 载体是为了与 稀土过渡能， 从而造成了巨大的非- 平衡分布通过 碰撞激发