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InP-Based Spintronic Devices

InP-Based Spintronic Devices
InP基自旋电子器件
批准号:
0754367
负责人:
Pallab Bhattacharya
金额:
$27.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-05-01 至 2011-04-30

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中文摘要
翻译
摘要ECCS-0754367P。目的:本研究的目的是实现分子束外延生长的InP基异质结构高温(200K)自旋电子器件。选择InP基异质结构的原因如下:(I)这些异质结构用于1.3和1.55微米的高频晶体管和光纤通信;甚至在未来的基于CMOS的VLSI中,InAs和InSb在硅上的优异载流子传输性能正在被研究;(Ii)对于InP基合金中的自旋注入,实验上知之甚少。该方法将研究和实现三种特定的器件:(A)用于研究自旋注入、输运和探测的自旋阀;(B)基于半导体-铁磁的存储器件;以及(C)自旋激光及其与自旋扭矩器件的调制。智能优点:与全金属自旋电子器件相比,基于自旋的铁磁/半导体异质结器件特别有吸引力,因为半导体中的多功能性和长的自旋相干时间。然而,到目前为止,还没有可以在室温或接近室温下工作的实用半导体自旋电子器件。拟议的研究计划将满足这一关键需求。广泛的影响:拟议的计划是跨学科的,除了技术优势外,还将对科学和社会产生广泛的影响。随着拟议的设备补充或选择性地取代传统微电子技术,这项研究及其结果的经济影响将会感受到。这项工作将自旋电子学与科学和工程中的其他领域结合起来,以实现实际应用。针对妇女和代表性不足的少数群体的外联项目被提议为本科生提供研究经验,并使高中生接触科学和工程学科。
英文摘要
AbstractECCS-0754367P. Bhattacharya, University of Michigan Ann ArborObjective: The objective of this research is to realize high-temperature (200K) spintronic devices with InP-based hetrostructures grown by molecular beam epitaxy. The reasons of choosing InP-based hetrostructures are the following : (i) these are used for high frequency transistors and for fiber-optic communication at 1.3 and 1.55 µm; even for future CMOS-based VLSI, InAs and InSb on silicon are being investigated for the superior carrier transport properties therein; (ii) very little is experimentally known regarding spin injection in InP-based alloys. The approach is to investigate and realize three specific devices: (a) spin valves for the study of spin injection, transport and detection; (b) semiconductor-ferromagnet based memory devices; and (c) spin lasers and their modulation with spin torque devices.Intellectual Merit: Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive, compared to all-metal spintronic devices, due to the versatility and the long spin coherence time in semiconductors. However, till date, practical semiconductor spintronic devices that can operate at or near room temperature do not exist. The proposed program of research will address this critical need.Broader Impact: The proposed program is interdisciplinary in nature and will provide a broad impact to science and society beyond technical merits. The economic impact of the research and its outcome will be felt as the proposed devices complement or selectively replace traditional microelectronics. This work combines spintronics with other fields in science and engineering for real applications. Outreach projects for women and underrepresented minorities are proposed to provide research experience for undergraduates and expose high school students to scientific and engineering disciplines.
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