InP-Based Spintronic Devices
InP-Based Spintronic Devices
批准号:
0754367
负责人:
Pallab Bhattacharya
金额:
$27.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-05-01 至 2011-04-30
中文摘要
abstracteccs - 0754367 p。目的:本研究的目的是通过分子束外延生长具有inp基异质结构的高温(200K)自旋电子器件。选择基于inp的异质结构的原因如下:(i)这些结构用于高频晶体管和1.3和1.55 μ m的光纤通信;即使在未来基于cmos的VLSI中,也正在研究基于硅的InAs和InSb,因为它们具有优越的载流子传输特性;(ii)对于inp基合金的自旋注入实验知之甚少。该方法是研究和实现三个具体装置:(a)用于研究自旋注入、输运和检测的自旋阀;(b)基于半导体铁磁的存储器件;(c)自旋激光器及其自旋力矩调制装置。智力优势:与全金属自旋电子器件相比,基于自旋的铁磁体/半导体异质结器件特别有吸引力,因为半导体中的多功能性和较长的自旋相干时间。然而,迄今为止,可在室温或接近室温下工作的实用半导体自旋电子器件尚不存在。拟议的研究计划将解决这一关键需求。更广泛的影响:拟议的项目本质上是跨学科的,将对科学和社会产生超越技术价值的广泛影响。这项研究及其成果的经济影响将被认为是对传统微电子技术的补充或选择性替代。这项工作结合了自旋电子学与其他科学和工程领域的实际应用。为妇女和代表性不足的少数民族提出的外展项目为本科生提供研究经验,并使高中生接触科学和工程学科。
英文摘要
AbstractECCS-0754367P. Bhattacharya, University of Michigan Ann ArborObjective: The objective of this research is to realize high-temperature (200K) spintronic devices with InP-based hetrostructures grown by molecular beam epitaxy. The reasons of choosing InP-based hetrostructures are the following : (i) these are used for high frequency transistors and for fiber-optic communication at 1.3 and 1.55 µm; even for future CMOS-based VLSI, InAs and InSb on silicon are being investigated for the superior carrier transport properties therein; (ii) very little is experimentally known regarding spin injection in InP-based alloys. The approach is to investigate and realize three specific devices: (a) spin valves for the study of spin injection, transport and detection; (b) semiconductor-ferromagnet based memory devices; and (c) spin lasers and their modulation with spin torque devices.Intellectual Merit: Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive, compared to all-metal spintronic devices, due to the versatility and the long spin coherence time in semiconductors. However, till date, practical semiconductor spintronic devices that can operate at or near room temperature do not exist. The proposed program of research will address this critical need.Broader Impact: The proposed program is interdisciplinary in nature and will provide a broad impact to science and society beyond technical merits. The economic impact of the research and its outcome will be felt as the proposed devices complement or selectively replace traditional microelectronics. This work combines spintronics with other fields in science and engineering for real applications. Outreach projects for women and underrepresented minorities are proposed to provide research experience for undergraduates and expose high school students to scientific and engineering disciplines.
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