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InP-Based Spintronic Devices

InP-Based Spintronic Devices
InP基自旋电子器件
批准号:
0754367
负责人:
Pallab Bhattacharya
金额:
$27.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-05-01 至 2011-04-30

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中文摘要
翻译
摘要ECCS-0754367P。 Bhattacharya,密歇根大学安娜堡分校目标:这项研究的目标是实现具有通过分子束外延生长的 InP 基异质结构的高温(200K)自旋电子器件。选择 InP 基异质结构的原因如下: (i) 这些用于高频晶体管以及 1.3 和 1.55 µm 的光纤通信;即使对于未来基于 CMOS 的 VLSI,硅上的 InAs 和 InSb 也正在研究其卓越的载流子传输特性; (ii) 关于 InP 基合金中的自旋注入,实验上所知甚少。该方法旨在研究并实现三个特定装置:(a)用于研究自旋注入、传输和检测的自旋阀; (b) 基于半导体铁磁体的存储器件;智力优点:与全金属自旋电子器件相比,由于半导体中的多功能性和长自旋相干时间,基于自旋的铁磁体/半导体异质结器件特别有吸引力。然而,迄今为止,能够在室温或接近室温下工作的实用半导体自旋电子器件还不存在。拟议的研究计划将满足这一关键需求。更广泛的影响:拟议的计划本质上是跨学科的,将为科学和社会带来超越技术优点的广泛影响。当所提出的设备补充或有选择地取代传统微电子学时,将感受到该研究及其成果的经济影响。这项工作将自旋电子学与科学和工程的其他领域结合起来以实现实际应用。建议针对女性和代表性不足的少数族裔开展外展项目,为本科生提供研究经验,并使高中生接触科学和工程学科。
英文摘要
AbstractECCS-0754367P. Bhattacharya, University of Michigan Ann ArborObjective: The objective of this research is to realize high-temperature (200K) spintronic devices with InP-based hetrostructures grown by molecular beam epitaxy. The reasons of choosing InP-based hetrostructures are the following : (i) these are used for high frequency transistors and for fiber-optic communication at 1.3 and 1.55 µm; even for future CMOS-based VLSI, InAs and InSb on silicon are being investigated for the superior carrier transport properties therein; (ii) very little is experimentally known regarding spin injection in InP-based alloys. The approach is to investigate and realize three specific devices: (a) spin valves for the study of spin injection, transport and detection; (b) semiconductor-ferromagnet based memory devices; and (c) spin lasers and their modulation with spin torque devices.Intellectual Merit: Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive, compared to all-metal spintronic devices, due to the versatility and the long spin coherence time in semiconductors. However, till date, practical semiconductor spintronic devices that can operate at or near room temperature do not exist. The proposed program of research will address this critical need.Broader Impact: The proposed program is interdisciplinary in nature and will provide a broad impact to science and society beyond technical merits. The economic impact of the research and its outcome will be felt as the proposed devices complement or selectively replace traditional microelectronics. This work combines spintronics with other fields in science and engineering for real applications. Outreach projects for women and underrepresented minorities are proposed to provide research experience for undergraduates and expose high school students to scientific and engineering disciplines.
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