InP-Based Spintronic Devices

InP基自旋电子器件

• 批准号: 0754367
• 负责人: Pallab Bhattacharya
• 金额: $ 27万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-05-01 至 2011-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0754367&HistoricalAwards=false
• 关键词: InP; Based; Spintronic; Devices

AbstractECCS-0754367P. Bhattacharya, University of Michigan Ann ArborObjective: The objective of this research is to realize high-temperature (200K) spintronic devices with InP-based hetrostructures grown by molecular beam epitaxy. The reasons of choosing InP-based hetrostructures are the following : (i) these are used for high frequency transistors and for fiber-optic communication at 1.3 and 1.55 µm; even for future CMOS-based VLSI, InAs and InSb on silicon are being investigated for the superior carrier transport properties therein; (ii) very little is experimentally known regarding spin injection in InP-based alloys. The approach is to investigate and realize three specific devices: (a) spin valves for the study of spin injection, transport and detection; (b) semiconductor-ferromagnet based memory devices; and (c) spin lasers and their modulation with spin torque devices.Intellectual Merit: Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive, compared to all-metal spintronic devices, due to the versatility and the long spin coherence time in semiconductors. However, till date, practical semiconductor spintronic devices that can operate at or near room temperature do not exist. The proposed program of research will address this critical need.Broader Impact: The proposed program is interdisciplinary in nature and will provide a broad impact to science and society beyond technical merits. The economic impact of the research and its outcome will be felt as the proposed devices complement or selectively replace traditional microelectronics. This work combines spintronics with other fields in science and engineering for real applications. Outreach projects for women and underrepresented minorities are proposed to provide research experience for undergraduates and expose high school students to scientific and engineering disciplines.

摘要ECCS-0754367 P。Bhattacharya，密歇根大学安娜堡分校目的：本研究的目标是利用分子束外延生长的InP基异质结实现高温（200 K）自旋电子器件。选择InP基异质结的原因如下：（i）它们用于高频晶体管和1.3和1.55 μm的光纤通信;甚至对于未来的CMOS基VLSI，硅上的InAs和InSb也正在研究其中的上级载流子输运特性;（ii）关于InP基合金中的自旋注入，实验上知之甚少。该方法是研究和实现三种具体的器件：（a）用于研究自旋注入、输运和检测的自旋阀;（B）基于磁阻-铁磁体的存储器件;和（c）自旋激光器及其与自旋力矩器件的调制。与全金属自旋电子器件相比，基于自旋的铁磁体/半导体异质结器件特别有吸引力，这是由于半导体中的多功能性和长自旋相干时间。然而，到目前为止，还不存在可以在室温或接近室温下操作的实用半导体自旋电子器件。拟议的研究计划将解决这一关键需求。更广泛的影响：拟议的计划是跨学科的性质，并将提供一个广泛的影响，科学和社会超越技术优点。研究的经济影响及其结果将被认为是拟议的设备补充或选择性地取代传统的微电子。这项工作结合了自旋电子学与其他领域的科学和工程的真实的应用。建议为妇女和代表人数不足的少数民族开展外联项目，为本科生提供研究经验，并使高中生接触科学和工程学科。