Studies of Antimony-Containing III-V Semiconductors and Heterostructure Devices

含锑III-V族半导体及异质结构器件的研究

• 批准号: 8800659
• 负责人: Pallab Bhattacharya
• 金额: $ 8万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-05-15 至 1990-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8800659&HistoricalAwards=false
• 关键词: Studies; Antimony; Containing; III; Semiconductors

The possibilities of electronic and opto-electronic device design using the Sb-containing alloys and heterostructures are largely unexplored. Part of the problem arises from the fact that some of these compounds exhibit miscibility gaps and spinodal decompositions in the phase diagrams. Molecular beam epitaxy is generally a far- from-equilibrium growth technique and, therefore, allows the low- temperature growth of these compounds within the miscibility gap. However, the materials can have severe alloy clustering and we, therefore, propose to study the growth of these alloys and heterostructures with in-situ and ex-situ characterization techniques. In particular, we will initiate our program with the growth of lattice-matched and strained GaSb, GaAlSb, and InAsSb, which will be extremely critical materials for a host of electronic and optical devices. Characterization of the layers will be done by temperature- dependent Hall, photoluminescence, absorption DLTS and Shubnikov-de Haas measurements. These should give a wealth of data regarding the fundamental materials characteristics. In addition, in-situ RHEED oscillations studies will be done to study the growth kinetics.

电子和光电器件设计的可能性 使用含Sb的合金和异质结构在很大程度上 未开发的 问题的部分原因是， 这些化合物表现出溶解性间隙和旋节线分解 在相图中。 分子束外延通常是一种远- 从平衡增长技术，因此，允许低- 这些化合物在可溶解性间隙内的温度增长。 然而，材料可能具有严重的合金聚集， 因此，建议研究这些合金的生长， 异质结构的原位和异位表征技术。 特别是，我们将启动我们的计划， 晶格匹配和应变GaSb，GaAlSb和InAsSb，这将是 一种用于电子和光学领域的极其关键的材料 装置. 各层的表征将通过温度来完成- 相关霍尔、光致发光、吸收DLTS和Shubnikov-de 哈斯测量。 这些应该提供丰富的数据， 基本材料特性。 此外，现场RHEED 将进行振荡研究以研究生长动力学。