A New Variable Bandgap Semiconductor System

一种新型可变带隙半导体系统

• 批准号: 9061058
• 负责人: Michael Squillante
• 金额: $ 5万
• 依托单位: Radiation Monitoring Devices Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-01-01 至 1991-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9061058&HistoricalAwards=false
• 关键词: New; Variable; Bandgap; Semiconductor; System

The electronics industry has shown considerable interest in semiconducting compounds with specially tailored electrical and optical properties for fabrication of a variety of electro-optic devices such as photodetectors and IR and visible lasers. One method that is commonly used to tailor the properties of various materials is adjusting the composition. This method has been exploited very successfully in case of materials as HgxCd1-xTe and GaxAl1-xAs where the change in composition results in changing Bandgap. This program will investigate a new material based on the wide bandgap semiconducting system HgBr2-HgI2 which form the ternary material, HgBrxI2-x, mercury bromoiodide. The bandgap of this ternary compound depends on the ratio of bromine to iodine in the crystal lattice and can be tuned by changing this ratio. The bandgap of HgBrxI2-x can be varied to cover almost the entire visible region of the electromagnetic spectrum. Such a material can be used in a wide range of electro-optic applications. The goal of this program is the method to prepare, purify and grow single crystals of HgBrxI2-x and to characterize the optical and electronic properties of this material and to investigate the variation in these properties with changing composition.

电子行业对以下方面表现出相当大的兴趣： 半导体化合物具有特别定制的电和 用于制造各种电光器件的光学性能 诸如光电探测器和IR和可见光激光器的设备。 一 方法，通常用于定制各种 材料正在调整成分。 该方法已 在HgxCd 1-xTe材料的情况下， 和GaxAl 1-xAs，其中组成的变化导致 改变能带隙 本节目将研究一种新材料 基于宽带隙半导体系统HgBr 2-HgI 2， 形成三元材料HgBrxI 2-x、溴碘化汞。 的 该三元化合物的带隙取决于溴 碘在晶格中，可以通过改变 这个比例。 HgBrxI 2-x的带隙可以变化以覆盖 几乎整个可见光区的电磁波 江西篇章 这样的材料可以用于广泛的用途。 电光应用 该计划的目标是 HgBrxI 2-x单晶的制备、纯化和生长方法 并表征其光学和电子性质 材料，并研究这些属性的变化 不断变化的成分。