SBIR Phase II: Advanced Detectors for X-Ray Diagnosis

SBIR 第二阶段：用于 X 射线诊断的先进探测器

• 批准号: 0450483
• 负责人: Michael Squillante
• 金额: --
• 依托单位: Radiation Monitoring Devices Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-03-01 至 2008-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0450483&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Advanced; Detectors

This Small Business Innovation Research (SBIR) Phase II project aims to produce a new, high-resolution x-ray detector for fluorescence measurements of lighter elements. For x-rays generally near 30 keV and below, there exist several tradeoffs between today's choices of lithium drifted silicon (Si/Li)) detectors and high purity germanium (HPGe) detectors. Si/Li) detectors offer simple spectral decomposition but have limited active volumes. Conversely, HPGe detectors can offer larger sizes, but pulse height analysis is complicated by short x-ray penetration and overlapping escape peaks. The technical goal is to develop a detector from high purity silicon, with a contact structure that allows for increasing detection volumes without high capacitance -antithetical to high-count rates. The work will entail device design and computational modeling, developing new electrical contact fabrications on high purity silicon, manufacturing numerous test detectors and evaluation under various conditions, including temperature. The impact of this technology could be how the detectors will be utilized and the basic science learned through the fabrication process. These detectors are used in many applications for the identification of completely diverse samples. Just a few examples include materials science, surface science, environmental analysis, industrial process and quality control, forensic sciences and archaeology, and geological and extraterrestrial exploration. In virtually any of these applications, a new detector providing greater counting efficiency yields more productive and definitive results.

这个小型企业创新研究（SBIR）第二阶段项目旨在生产一种新的高分辨率X射线探测器，用于较轻元素的荧光测量。对于通常接近30 keV和更低的X射线，在当今锂漂移硅（Si/Li）探测器和高纯锗（HPGe）探测器的选择之间存在若干折衷。Si/Li）探测器提供简单的光谱分解，但具有有限的有效体积。相反，HPGe探测器可以提供更大的尺寸，但是脉冲高度分析由于短的X射线穿透和重叠的逃逸峰而变得复杂。技术目标是开发一种由高纯度硅制成的检测器，其接触结构允许在没有高电容的情况下增加检测体积-与高计数率相反。 这项工作将涉及设备设计和计算建模，在高纯硅上开发新的电接触制造，制造许多测试探测器并在各种条件下进行评估，包括温度。这项技术的影响可能是如何利用探测器以及通过制造过程学习基础科学。这些检测器在许多应用中用于识别完全不同的样品。 仅举几个例子，包括材料科学，表面科学，环境分析，工业过程和质量控制，法医科学和考古学，地质和外星探索。 在几乎所有这些应用中，提供更高计数效率的新检测器都会产生更有成效和更明确的结果。