Dopant Incorporation and Properties in Zinc Selenide

硒化锌中的掺杂剂掺入及其性能

• 批准号: 9106359
• 负责人: Brian Skromme
• 金额: $ 19.85万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9106359&HistoricalAwards=false
• 关键词: Dopant; Incorporation; Properties; Zinc; Selenide

This project seeks to achieve a fundamental understanding of the behavior of the dopants (controlled impurity atoms) needed to obtain desired levels of electrical conductivity of crystalline zinc selenide (ZnSe), a II-VI compound semiconductor material. This material has important potential applications such as solid state devices which emit blue light, including lasers, which are not currently available. Such devices would provide advantages for optical information storage systems, full color displays, laser printers, and other purposes. However, the inability to control the conductivity of ZnSe in the way commonly done with other semiconducting materials has thus far prevented its use for such practical applications. Sophisticated optical spectroscopy with and without the influence of intense magnetic fields, and electrical measurements are being employed to explore the behavior of various impurities in the material, and to determine which ones are most suitable for controlling its conductivity in the way that is necessary for device applications. Close collaborations with industrial crystal growers are an important part of the program.

该项目旨在从根本上了解 所需的掺杂剂（受控杂质原子）的行为 获得所需水平的晶体的电导率 硒化锌（ZnSe），一种II-VI族化合物半导体材料。 这种材料具有重要的潜在应用，例如固体 本发明涉及发射蓝光的器件，包括激光器， 目前不可用。 这样的装置将为以下提供优点： 光学信息存储系统，全色显示，激光 打印机和其他用途。 然而，无法控制 硒化锌的导电性通常与其他 半导体材料迄今为止阻止了其用于这样的目的。 实际应用等 精密的光学光谱学， 并且不受强磁场的影响， 电测量被用来探索 材料中的各种杂质，并确定哪些 最适合控制其导电性， 是设备应用所必需的。 密切合作， 工业晶体生长器是该计划的重要组成部分。