II-VI Compound Semiconductor-Based Visible Light Devices

亚利桑那州立大学（ASU），合作 伊利诺伊大学芝加哥分校（UIC）， 将进行实验密集，多- II-VI族化合物学科研究计划 半导体发光器件. 的 计划将强调增长和掺杂， 分子束外延（MBE）和随后的 一种新型的晶格匹配 涉及四元Zn 1- xMnxSySe 1-y限制层和包覆层， ZnSzSe1-z有源层。 新的四元合金， 其先前未生长， 在很宽的范围内与GaAs衬底匹配， 带隙从蓝阱延伸到 紫外线 预测了有利的波段偏移 对于这个系统的传导和价态 波段，基于现有数据的插值 Zn1-xMnxSe/ZnSe和ZnSySe 1-y/ZnSe 异质结构 真正的蓝色和紫色激光， 基于困扰缺陷的异质结构LED 现有的ZnSySe 1-y/ZnSe/Zn 1-xCdxSe II-VI激光器 结构. 基于Hg的欧姆接触层 还将研究化合物， 解决目前接触P的关键问题， 类型材料。

Arizona State University (ASU), in collaboration with the University of Illinois at Chicago (UIC), will carry out experimentally intensive, multi- disciplinary research program on II-VI Compound Semiconductor-Based Light Emitting Devices. The program will emphasize the growth and doping by molecular beam epitaxy (MBE) and subsequent characterization of a novel type of lattice-matched heterostructure involving quaternary Zn1- xMnxSySe1-y confinement and cladding layers and ZnSzSe1-z active layers. the new quaternary alloy, which has not previously been grown, can be lattice matched to GaAs substrates over a wide range of band gaps extending from the blue well into the ultra-violet. Favorable band offsets are predicted for this system in both conduction and valence bands, based on interpolation of existing data on Zn1-xMnxSe/ZnSe and ZnSySe1-y/ZnSe heterostructures. True blue and violet lasers and heterostructure LED's based on defects that plague existing ZnSySe1-y/ZnSe/Zn1-xCdxSe II-VI laser structures. Ohmic contact layers based on Hg compounds will also be investigated to attempt to solve the currently critical problem of contacting p- type material.