II-VI Compound Semiconductor-Based Visible Light Devices

基于 II-VI 化合物半导体的可见光器件

• 批准号: 9202664
• 负责人: Brian Skromme
• 金额: $ 43.5万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-15 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202664&HistoricalAwards=false
• 关键词: II; VI; Compound; Semiconductor; Based

Arizona State University (ASU), in collaboration with the University of Illinois at Chicago (UIC), will carry out experimentally intensive, multi- disciplinary research program on II-VI Compound Semiconductor-Based Light Emitting Devices. The program will emphasize the growth and doping by molecular beam epitaxy (MBE) and subsequent characterization of a novel type of lattice-matched heterostructure involving quaternary Zn1- xMnxSySe1-y confinement and cladding layers and ZnSzSe1-z active layers. the new quaternary alloy, which has not previously been grown, can be lattice matched to GaAs substrates over a wide range of band gaps extending from the blue well into the ultra-violet. Favorable band offsets are predicted for this system in both conduction and valence bands, based on interpolation of existing data on Zn1-xMnxSe/ZnSe and ZnSySe1-y/ZnSe heterostructures. True blue and violet lasers and heterostructure LED's based on defects that plague existing ZnSySe1-y/ZnSe/Zn1-xCdxSe II-VI laser structures. Ohmic contact layers based on Hg compounds will also be investigated to attempt to solve the currently critical problem of contacting p- type material.

亚利桑那州立大学（ASU）将与伊利诺伊大学芝加哥分校（UIC）合作，开展II-VI化合物半导体基发光器件的实验密集、多学科研究项目。该项目将强调通过分子束外延（MBE）的生长和掺杂，以及随后表征一种新型的晶格匹配异质结构，包括季系Zn1- xMnxSySe1-y约束层和包层以及ZnSzSe1-z活性层。这种新的四元合金以前从未生长过，它可以在从蓝色到紫外线的广泛带隙范围内与砷化镓衬底晶格匹配。通过对已有的Zn1-xMnxSe/ZnSe和ZnSySe1-y/ZnSe异质结构数据的插值，预测了该体系在传导带和价带上的有利波段偏移。基于现有ZnSySe1-y/ZnSe/Zn1-xCdxSe II-VI激光结构缺陷的真蓝紫色激光器和异质结构LED。基于汞化合物的欧姆接触层也将被研究，以试图解决目前接触p型材料的关键问题。