GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices

目标：SiC 和 GaN 器件中的缺陷和退化机制的影响

• 批准号: 0324350
• 负责人: Brian Skromme
• 金额: $ 33万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2006-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0324350&HistoricalAwards=false
• 关键词: GOALI; Effects; Defects; Degradation; Mechanisms

Intellectual Merit. This GOALI project at Arizona State University (ASU), in collaboration with our industrial partner Technologies and Devices International, Inc. (TDI), will investigate the effects of extended crystal defects on the performance of electronic devices fabricated from GaN, and identify the cause of the major degradation mechanisms in devices made from SiC. The high breakdown field, reasonable mobilities, and ability to form heterostructures (in the GaN case) of these materials has led to increasing interest in their use for high power, high temperature electronics applications. However, crystal defects and related degradation mechanisms currently limit these applications. The objective is to determine the fundamental causes of degradation mechanisms that currently affect SiC devices so that they can be eliminated, and to determine the effects of various classes of crystal defects on the electrical properties of junctions fabricated in GaN so that the most important defects can be targeted for elimination. SiC degradation mechanisms will be studied using in situ measurements by synchrotron based white-beam X-ray topography (SWBXT), to be performed at State University of New York-Stony Brook. Device fabrication, electrical characterization, optical Nomarski microscopy, electron beam-induced current (EBIC), and cathodoluminescence (CL) will be performed at ASU. The effects of defects in GaN diodes will be studied by fabricating high voltage diodes in either lateral or vertical geometries, using low defect density GaN starting material. This material will be grown at TDI, and provided to ASU. The diodes will be characterized electrically, and defects will then be studied by SWBXT, EBIC, and atomic force microscopy. Using small active area devices, we will establish the effects of each defect class on electrical performance. We will also search for luminescence signatures of various structural defects in GaN. Some TEM measurements of selected defects will be carried ASU. The results will be correlated to yield a comprehensive understanding of the influence of defects, and the results will be shared with TDI to help improve their growth processes.Broader Impacts. This project will educate two Ph.D. students in an industrially relevant research area. PowerPoint slides detailing the properties and applications of wide band gap semiconductors will be developed and made freely available to those teaching semiconductor device physics at the graduate and undergraduate levels. Undergraduate students will be involved through a senior design project based on the grant. Web pages aimed at high school students and the general public will be developed to explain the properties and applications of wide band gap semiconductors. Industrial interactions with TDI and another company in this area will be strengthened by this project. Solution of the technical problems limiting the application of these materials will lead to more efficient power switching devices, which could reduce losses in power systems and yield large savings in fossil fuels and pollution.

知识价值。亚利桑那州立大学（ASU）与我们的工业合作伙伴技术与设备国际公司（TDI）合作的这个GOALI项目将研究扩展晶体缺陷对由GaN制成的电子器件性能的影响，并确定由SiC制成的器件的主要退化机制的原因。这些材料的高击穿场、合理的迁移率和形成异质结构的能力（在氮化镓的情况下）使得人们对它们在高功率、高温电子应用中的应用越来越感兴趣。然而，晶体缺陷和相关的降解机制目前限制了这些应用。目的是确定目前影响SiC器件的降解机制的根本原因，以便消除它们，并确定各种类型的晶体缺陷对GaN中制造的结的电学性能的影响，以便可以针对最重要的缺陷进行消除。SiC降解机制将在纽约州立大学石溪分校进行，使用基于同步加速器的白束x射线形貌（SWBXT）进行原位测量。器件制造，电学表征，光学诺玛斯基显微镜，电子束感应电流（EBIC）和阴极发光（CL）将在亚利桑那州立大学进行。利用低缺陷密度的氮化镓起始材料，以横向或垂直几何形状制造高压二极管，研究氮化镓二极管中缺陷的影响。这种材料将在TDI种植，并提供给亚利桑那州立大学。二极管将被电学表征，然后缺陷将被SWBXT， EBIC和原子力显微镜研究。使用小的有源区域装置，我们将建立每个缺陷类别对电气性能的影响。我们还将寻找GaN中各种结构缺陷的发光特征。一些选定缺陷的透射电镜测量将进行ASU。这些结果将相互关联，以产生对缺陷影响的全面理解，并且这些结果将与TDI共享，以帮助改进它们的生长过程。更广泛的影响。本项目将在工业相关研究领域培养两名博士生。详细介绍宽带隙半导体的特性和应用的PowerPoint幻灯片将被开发出来，并免费提供给那些在研究生和本科阶段教授半导体器件物理的人。本科生将参与一个基于资助的高级设计项目。将开发针对高中生和一般公众的网页，解释宽带隙半导体的性质和应用。该项目将加强与TDI和该地区另一家公司的产业互动。限制这些材料应用的技术问题的解决将导致更高效的电源开关设备，这可以减少电力系统的损失，并节省大量的化石燃料和污染。