Wide Bandgap Semiconductors and Heterostructures

宽禁带半导体和异质结构

• 批准号: 9202692
• 负责人: Charles Tu
• 金额: $ 26.5万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1995-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202692&HistoricalAwards=false
• 关键词: Wide; Bandgap; Semiconductors; Heterostructures

Synthesis, processing, and characterization of technologically important but less developed AlGaP/GaP(As) on GaP and Si1-xCx alloys on Si will be conducted. The co-PIs provide a strong interdisciplinary team with expertise in the key areas of importance for this project: gas-source molecular beam epitaxy (MBE), heterojunction bipolar transistors (HBT), and material characterization. Hydride-source MBE shall be used for growing the phosphides, and laser- or plasma-assisted gas-source MBE shall be used for growing the Si1-xCx alloys. Characterization by structural, optical, and electrical measurements, including HBT's, shall be used to evaluate the materials quality. The research aims to achieve fundamental understanding of materials growth and processing, and to contribute to the technology for large-bandgap semiconductors for high-temperature, high-power and high-performance microelectronic circuits. %%% This research is expected to advance the materials science in synthesis and processing of wide-bandgap materials based on phosphides and silicon. They are suitable for applications in high-temperature microelectronics for operation in adverse environments, such as in engines; in high-power microelectronic circuits for diverse realms of applications; and in Si-based high-speed transistors with wide-bandgap emitters.

将在SI上进行GAP和SI1-XCX合金的技术重要但不发达的ALGAP/GAP（AS）的合成，处理和表征。 Co-PI为该项目的重要性关键领域提供了一个强大的跨学科团队：气体源分子束外延（MBE），异性结双极晶体管（HBT）和材料表征。 Hydride-Source MBE应用于生长磷化物，并使用激光或等离子体辅助的气体源MBE用于生长Si1-XCX合金。 应使用结构，光学和电气测量（包括HBT）的表征来评估材料质量。 该研究旨在实现对材料增长和加工的基本了解，并为高温，高功率和高性能的微电子电路的大型带gap半导体的技术做出贡献。 %%％这项研究有望推进基于磷化物和硅的宽带材料的合成和加工材料科学。 它们适用于在不利环境（例如发动机）中进行高温微电子的应用；在高功率微电路中，用于应用程序的各种领域；在带有宽带发射器的基于SI的高速晶体管中。