Wide Bandgap Semiconductors and Heterostructures

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Synthesis, processing, and characterization of technologically important but less developed AlGaP/GaP(As) on GaP and Si1-xCx alloys on Si will be conducted. The co-PIs provide a strong interdisciplinary team with expertise in the key areas of importance for this project: gas-source molecular beam epitaxy (MBE), heterojunction bipolar transistors (HBT), and material characterization. Hydride-source MBE shall be used for growing the phosphides, and laser- or plasma-assisted gas-source MBE shall be used for growing the Si1-xCx alloys. Characterization by structural, optical, and electrical measurements, including HBT's, shall be used to evaluate the materials quality. The research aims to achieve fundamental understanding of materials growth and processing, and to contribute to the technology for large-bandgap semiconductors for high-temperature, high-power and high-performance microelectronic circuits. %%% This research is expected to advance the materials science in synthesis and processing of wide-bandgap materials based on phosphides and silicon. They are suitable for applications in high-temperature microelectronics for operation in adverse environments, such as in engines; in high-power microelectronic circuits for diverse realms of applications; and in Si-based high-speed transistors with wide-bandgap emitters.