Wide Bandgap Semiconductors and Heterostructures

宽禁带半导体和异质结构

• 批准号: 9202692
• 负责人: Charles Tu
• 金额: $ 26.5万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1995-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202692&HistoricalAwards=false
• 关键词: Wide; Bandgap; Semiconductors; Heterostructures

Synthesis, processing, and characterization of technologically important but less developed AlGaP/GaP(As) on GaP and Si1-xCx alloys on Si will be conducted. The co-PIs provide a strong interdisciplinary team with expertise in the key areas of importance for this project: gas-source molecular beam epitaxy (MBE), heterojunction bipolar transistors (HBT), and material characterization. Hydride-source MBE shall be used for growing the phosphides, and laser- or plasma-assisted gas-source MBE shall be used for growing the Si1-xCx alloys. Characterization by structural, optical, and electrical measurements, including HBT's, shall be used to evaluate the materials quality. The research aims to achieve fundamental understanding of materials growth and processing, and to contribute to the technology for large-bandgap semiconductors for high-temperature, high-power and high-performance microelectronic circuits. %%% This research is expected to advance the materials science in synthesis and processing of wide-bandgap materials based on phosphides and silicon. They are suitable for applications in high-temperature microelectronics for operation in adverse environments, such as in engines; in high-power microelectronic circuits for diverse realms of applications; and in Si-based high-speed transistors with wide-bandgap emitters.

将进行技术上重要但欠发达的AlGaP/GaP（As）和Si上的Si1-xCx合金的合成、加工和表征。合作pi提供了一个强大的跨学科团队，在该项目重要的关键领域具有专业知识：气源分子束外延（MBE），异质结双极晶体管（HBT）和材料表征。氢化物源MBE应使用用于生长磷化物，激光或等离子体辅助气源MBE应使用用于生长Si1-xCx合金。通过结构、光学和电学测量，包括HBT、应使用来评估材料质量。该研究旨在实现对材料生长和加工的基本理解，并为用于高温、高功率和高性能微电子电路的大带隙半导体技术做出贡献。这项研究有望推动基于磷化物和硅的宽禁带材料的合成和加工。它们适用于在恶劣环境中运行的高温微电子应用，例如在发动机中；在大功率微电子电路的各种应用领域；以及具有宽带隙发射体的硅基高速晶体管。