Support of the 15th International Conference on Molecular Beam Epitaxy; Vancouver, Canada; August 2008
Support of the 15th International Conference on Molecular Beam Epitaxy; Vancouver, Canada; August 2008
批准号:
0840373
负责人:
Charles Tu
金额:
$0.4万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-08-01 至 2009-07-31
中文摘要
技术上的。分子束外延(MBE)国际会议将于2008年8月3日至8日在加拿大温哥华不列颠哥伦比亚大学举行。这次会议的范围很广,涵盖了MBE的所有领域。会议的重点是分子束外延生长、加工和表征的材料方面,但会议还包括所产生的薄膜和结构的相关物理和器件特性。会议组织者安排了3次全体会议,14次特邀会议,并就MBE相关研究的最新成果发表了约250篇论文,以提供一个激励和广泛的知识环境。非技术性的。这次会议为致力于这些和相关主题的大学、政府和工业科学家之间的互动提供了一个极好的论坛。所要求的旅费和会议费支助旨在改善将任职人数不足群体的成员纳入与电子材料有关的领域。随着评估该领域和未来方向的机会,预计大学、研究机构和行业之间将建立新的联系。
英文摘要
Technical. An International Conference on Molecular Beam Epitaxy (MBE) will be held during the week of August 3-8, 2008 at the University of British Columbia, Vancouver, Canada. The scope of the conference is broad, covering the entire spectrum of MBE. The focus is on the material aspects of MBE growth, processing and characterization, but the conference also includes relevant physics and device properties of resulting films and structures. The conference organizers have scheduled three plenary talks, fourteen invited talks, and ~250 contributed papers on the latest results on MBE-related research to provide a stimulating and wide-ranging intellectual environment. Non-technical. The conference provides an excellent forum for interaction between university, government and industrial scientists working on these and related topics. The travel and conference fee support requested is targeted to improve the inclusion of members of under-represented groups in fields related to electronic materials. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established among universities, research institutions, and industry.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
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批准号:1106369
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依托单位:
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Dilute Nitride AlGaNP/GaP for Solid-State Lighting
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财政年份:2006
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依托单位:
The Fifth International Conference on Chemical Beam Epitaxy to be held at the University of California, San Diego on August 14-16, 1995
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批准号:9508599
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项目类别:Standard Grant
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资助金额:$0.4万
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财政年份:1995
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负责人:Charles Tu
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依托单位:
ENGINEERING RESEARCH EQUIPMENT: Low-Energy Ion Gun System for Growing III-V Nitrides
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批准号:9412073
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:1994
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负责人:Charles Tu
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依托单位:
NSF-CGP Science Fellowhip Program: Growth of InxGa1-xAs by Molecular Beam Epitaxy with In Situ Carbon Implantation
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批准号:9217997
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项目类别:Continuing Grant
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资助金额:$2.5万
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财政年份:1993
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负责人:Charles Tu
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依托单位:
Wide Bandgap Semiconductors and Heterostructures
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批准号:9202692
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项目类别:Continuing Grant
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资助金额:$26.5万
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财政年份:1992
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负责人:Charles Tu
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依托单位:
Gas-Source MBE of III-V Heterostructures for Device Applications
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批准号:9112372
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项目类别:Standard Grant
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资助金额:$3.6万
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财政年份:1991
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负责人:Charles Tu
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依托单位:
Support of the Sixth International Conference on Molecular Beam Epitaxy, San Diego, California, August 26-31, 1990
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批准号:9001052
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项目类别:Standard Grant
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资助金额:$0.8万
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财政年份:1990
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负责人:Charles Tu
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依托单位:
海外基金