Dilute Nitride GaNAsP for High Efficiency Multiband Solar Cells
用于高效多波段太阳能电池的稀氮化物 GaNAsP
基本信息
- 批准号:0907652
- 负责人:
- 金额:$ 34.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2009
- 资助国家:美国
- 起止时间:2009-08-15 至 2012-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Technical: This research project aims to improve the power conversion efficiency of solar cells by investigating a multiband material, a semiconductor with an intermediate band. Such a material has effectively three absorption bands and a single junction could be equivalent to a more complicated, but high-efficiency, three-junction solar cell. The growth and processing of such a material is a major challenge, along with understanding and modeling of a multiband solar cell. The emphasis of this project is on materials growth and processing of a particular class of materials, dilute nitride GaNAsP, which has an intermediate band so that electrons can be absorbed by below-bandgap photons, be excited to the intermediate band, and on to the conduction band providing current. These below-bandgap photo-excitations are in addition to the absorption of above-bandgap photons to excite electrons from the valence band to the conduction band directly. The PI, his students and collaborators at the National Renewable Energy Laboratory will study fundamental aspects of the growth, processing and characterization, with the aim toward greater understanding of fundamental materials science and optimization of the multiband material for solar cell applications. The approach includes fabrication and testing, in comparison with single-band solar cells. Greater understanding of the physical properties of such multiband semiconductors is expected as an outcome, advancing the field generally, and the performance of solar cells. Non-technical: This project addresses basic research issues in a topical area of materials science with high technological relevance. High-efficiency solar photovoltaic cells have broad potential impact on economy and human life through more efficient electrical energy generation. Compared to single-junction and multijunction solar cells, the multiband solar cells investigated in this project could provide significantly higher efficiency and lower cost. The research activities will promote interdisciplinary training for students in growth and characterization of novel compound semiconductors, prototype solar cell device design, and fabrication. Undergraduate students will also participate in the research project; they will be recruited from various sources, including the McNair Program, which serves low-income students and/or underrepresented minorities. The undergraduate students' activities will include advanced characterizations, such as atomic force microscopy, and participation in various undergraduate research conferences at UCSD. Additionally, the PI is the director of the COSMOS (California State Summer School for Mathematics and Science) residential summer program for 150 high school students. The results of this research project can be incorporated into the curriculum and extend to the high schools through the Teacher Fellow program of COSMOS.
技术支持:本研究项目旨在通过研究多能带材料,即具有中间能带的半导体,来提高太阳能电池的功率转换效率。这种材料实际上具有三个吸收带,单个结可以等效于更复杂但高效的三结太阳能电池。这种材料的生长和加工是一个主要的挑战,沿着理解和建模的多波段太阳能电池。该项目的重点是材料生长和特定类别材料的加工,稀氮化物GaNAsP,其具有中间带,使得电子可以被带隙以下的光子吸收,被激发到中间带,并到提供电流的导带。这些低于带隙的光激发是对高于带隙的光子的吸收的补充,以将电子从价带直接激发到导带。PI,他的学生和国家可再生能源实验室的合作者将研究生长,加工和表征的基本方面,旨在更好地理解基础材料科学和优化太阳能电池应用的多波段材料。该方法包括制造和测试,与单波段太阳能电池相比。对这种多带半导体的物理特性的更深入的理解有望成为一个成果,从而推动该领域的普遍发展,并提高太阳能电池的性能。非技术性:该项目涉及材料科学领域的基础研究问题,具有高技术相关性。高效太阳能光伏电池通过更高效的发电对经济和人类生活具有广泛的潜在影响。与单结和多结太阳能电池相比,本项目研究的多波段太阳能电池可以提供更高的效率和更低的成本。研究活动将促进学生在新型化合物半导体的生长和表征,原型太阳能电池器件设计和制造方面的跨学科培训。本科生也将参与研究项目;他们将从各种来源招募,包括麦克奈尔计划,该计划为低收入学生和/或代表性不足的少数民族提供服务。本科生的活动将包括先进的表征,如原子力显微镜,并在UCSD的各种本科研究会议的参与。此外,PI是150名高中生的COSMOS(加州数学和科学暑期学校)住宅暑期项目的负责人。本研究计画之成果可纳入课程,并透过COSMOS教师研究员计画延伸至高中。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Charles Tu其他文献
Novel GaNAs and GaNP-Based Nanowires ・Promising Materials for Optoelectronics and Photonics
新型 GaN 和 GaN 基纳米线 ・有前途的光电子学和光子学材料
- DOI:
- 发表时间:
2016 - 期刊:
- 影响因子:0
- 作者:
Irina Buyanova;Fumitaro Ishikawa;Charles Tu;Weimin Chen - 通讯作者:
Weimin Chen
Charles Tu的其他文献
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{{ truncateString('Charles Tu', 18)}}的其他基金
GaNP Based Coaxial Nanowires for Photovoltaic Applications
用于光伏应用的 GaN 基同轴纳米线
- 批准号:
1106369 - 财政年份:2011
- 资助金额:
$ 34.5万 - 项目类别:
Standard Grant
Support of the 15th International Conference on Molecular Beam Epitaxy; Vancouver, Canada; August 2008
支持第十五届国际分子束外延会议;
- 批准号:
0840373 - 财政年份:2008
- 资助金额:
$ 34.5万 - 项目类别:
Standard Grant
Dilute Nitride AlGaNP/GaP for Solid-State Lighting
用于固态照明的稀氮化物 AlGaNP/GaP
- 批准号:
0606389 - 财政年份:2006
- 资助金额:
$ 34.5万 - 项目类别:
Standard Grant
The Fifth International Conference on Chemical Beam Epitaxy to be held at the University of California, San Diego on August 14-16, 1995
第五届化学束外延国际会议将于1995年8月14-16日在加州大学圣地亚哥分校举行
- 批准号:
9508599 - 财政年份:1995
- 资助金额:
$ 34.5万 - 项目类别:
Standard Grant
ENGINEERING RESEARCH EQUIPMENT: Low-Energy Ion Gun System for Growing III-V Nitrides
工程研究设备:用于生长 III-V 族氮化物的低能离子枪系统
- 批准号:
9412073 - 财政年份:1994
- 资助金额:
$ 34.5万 - 项目类别:
Standard Grant
NSF-CGP Science Fellowhip Program: Growth of InxGa1-xAs by Molecular Beam Epitaxy with In Situ Carbon Implantation
NSF-CGP 科学奖学金计划:通过分子束外延和原位碳注入生长 InxGa1-xAs
- 批准号:
9217997 - 财政年份:1993
- 资助金额:
$ 34.5万 - 项目类别:
Continuing Grant
Wide Bandgap Semiconductors and Heterostructures
宽禁带半导体和异质结构
- 批准号:
9202692 - 财政年份:1992
- 资助金额:
$ 34.5万 - 项目类别:
Continuing Grant
Gas-Source MBE of III-V Heterostructures for Device Applications
用于器件应用的 III-V 异质结构气源 MBE
- 批准号:
9112372 - 财政年份:1991
- 资助金额:
$ 34.5万 - 项目类别:
Standard Grant
Support of the Sixth International Conference on Molecular Beam Epitaxy, San Diego, California, August 26-31, 1990
第六届国际分子束外延会议的支持,加利福尼亚州圣地亚哥,1990 年 8 月 26-31 日
- 批准号:
9001052 - 财政年份:1990
- 资助金额:
$ 34.5万 - 项目类别:
Standard Grant
相似国自然基金
基于稀氮砷化镓(Dilute nitride GaNAs)的近红外自旋放大纳米线激光器的研究
- 批准号:61905071
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- 项目类别:青年科学基金项目
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