NSF-CGP Science Fellowhip Program: Growth of InxGa1-xAs by Molecular Beam Epitaxy with In Situ Carbon Implantation

NSF-CGP 科学奖学金计划：通过分子束外延和原位碳注入生长 InxGa1-xAs

• 批准号: 9217997
• 负责人: Charles Tu
• 金额: $ 2.5万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-15 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9217997&HistoricalAwards=false
• 关键词: NSF; CGP; Science; Fellowhip; Program

WPC 2 B J Z Courier #| x ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 6 V Z Courier ? x x x , ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 * F Z : #| x INT 9217997 Tu This award supports a two year continuing grant under the NSF CGP (Center for Global Partnership) Science Fellowship Program for Professor Charles W. Tu, Department of Electrical and Computer Engineering, University of California, San Diego. During two three month visits to Japan in 1993 and 1994, Professor Tu will work with Dr. Yunosuke Makita, Optoelectronics Division, Electrotechnical Laboratory (ETL), The Agency of Industrial Science and Technology, MITI, located in Tsukuba Science City. The focus of this project will be in growing Inx Ga1 xAs by molecular beam epitaxy (MBE) with in situ carbon ion implantation for a wide range of composition x on GaAs and InP substrates. Carbon doped Inx Ga1 xAs is important as a base layer in hererojunction bipolar transistors (HBT) because carbon has a much lower diffusivity than other commonly used p type dopants, making a thin base with extremely high doping concentration possible for high performance HBT's. Carbon ion implantation may be an effective method of introducing active carbon dopants into the films, as compared to some of the other techniques. The combined ion beam MBE system at ETL offers a unique opportunity to investigate this scientifically interesting and technologically important materials problem. Extensive charactrization, including structural, electrical, and optical measurements and some device fabrication, will be performed both at ETL and at the Un iversity of California, San Diego.

WPC 2 B J Z Courier#|x._x 6 X@`7 X@HP LaserJet 4 HPLAS4.PRS x@\X@2 6 V Z快递？X，._x 6 X@`7 X@HP LaserJet 4 HPLAS4.PRS x@\X@2*F Z：#|x Int 9217997 Tu该奖项支持在NSF CGP(全球伙伴关系中心)科学奖学金计划下为查尔斯·W·杜教授提供的两年持续资助，加州大学圣地亚哥分校电子与计算机工程系。在1993年和1994年对日本的两次为期三个月的访问期间，屠呦呦教授将与位于筑波科学城的工业科学技术厅电工技术实验室(ETL)光电子部真田优之助博士合作。本项目的重点将是用分子束外延(MBE)和原位碳离子注入的方法在GaAs和InP衬底上生长多种成分x的Inx Ga1 xAs。在异质结双极晶体管(HBT)中，掺碳的Inx Ga1 xAs是一种重要的基层，因为碳的扩散系数比其他常用的p型掺杂要低得多，这使得具有极高掺杂浓度的薄衬底成为高性能HBT的可能。与其他一些技术相比，碳离子注入可能是在薄膜中引入活性碳掺杂的有效方法。ETL的组合离子束MBE系统为研究这一具有科学意义和技术重要性的材料问题提供了一个独特的机会。将在ETL和加州大学圣地亚哥分校进行广泛的表征，包括结构、电气和光学测量以及一些器件制造。