NSF-CGP Science Fellowhip Program: Growth of InxGa1-xAs by Molecular Beam Epitaxy with In Situ Carbon Implantation

NSF-CGP 科学奖学金计划：通过分子束外延和原位碳注入生长 InxGa1-xAs

• 批准号: 9217997
• 负责人: Charles Tu
• 金额: $ 2.5万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-15 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9217997&HistoricalAwards=false
• 关键词: NSF; CGP; Science; Fellowhip; Program

WPC 2 B J Z Courier #| x ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 6 V Z Courier ? x x x , ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 * F Z : #| x INT 9217997 Tu This award supports a two year continuing grant under the NSF CGP (Center for Global Partnership) Science Fellowship Program for Professor Charles W. Tu, Department of Electrical and Computer Engineering, University of California, San Diego. During two three month visits to Japan in 1993 and 1994, Professor Tu will work with Dr. Yunosuke Makita, Optoelectronics Division, Electrotechnical Laboratory (ETL), The Agency of Industrial Science and Technology, MITI, located in Tsukuba Science City. The focus of this project will be in growing Inx Ga1 xAs by molecular beam epitaxy (MBE) with in situ carbon ion implantation for a wide range of composition x on GaAs and InP substrates. Carbon doped Inx Ga1 xAs is important as a base layer in hererojunction bipolar transistors (HBT) because carbon has a much lower diffusivity than other commonly used p type dopants, making a thin base with extremely high doping concentration possible for high performance HBT's. Carbon ion implantation may be an effective method of introducing active carbon dopants into the films, as compared to some of the other techniques. The combined ion beam MBE system at ETL offers a unique opportunity to investigate this scientifically interesting and technologically important materials problem. Extensive charactrization, including structural, electrical, and optical measurements and some device fabrication, will be performed both at ETL and at the Un iversity of California, San Diego.

WPC 2 B J Z Courier #| x。HP LaserJet 4 HPLAS4。PRS x @ \ x @ 2 6 V Z信使？X X X，。HP LaserJet 4 HPLAS4。该奖项由美国国家科学基金会（NSF） CGP（全球伙伴关系中心）科学奖学金项目资助，资助加州大学圣地亚哥分校电气与计算机工程系Charles W. Tu教授，为期两年。在1993年和1994年两次为期三个月的日本访问期间，屠教授将与位于筑波科学城的通产省工业科学技术机构光电实验室（ETL）的Yunosuke Makita博士合作。这个项目的重点将是通过分子束外延（MBE）和原位碳离子注入在GaAs和InP衬底上生长各种成分的Inx Ga1 xAs。碳掺杂的Inx Ga1 xAs作为异质结双极晶体管（HBT）的基材层是重要的，因为碳具有比其他常用的p型掺杂剂低得多的扩散系数，使得具有极高掺杂浓度的薄基材成为高性能HBT的可能。与其他一些技术相比，碳离子注入可能是一种将活性炭掺杂剂引入薄膜的有效方法。ETL的组合离子束MBE系统提供了一个独特的机会来研究这个科学上有趣和技术上重要的材料问题。广泛的表征，包括结构、电气和光学测量以及一些设备制造，将在ETL和加州大学圣地亚哥分校进行。