NSF-CGP Science Fellowhip Program: Growth of InxGa1-xAs by Molecular Beam Epitaxy with In Situ Carbon Implantation

NSF-CGP 科学奖学金计划：通过分子束外延和原位碳注入生长 InxGa1-xAs

• 批准号: 9217997
• 负责人: Charles Tu
• 金额: $ 2.5万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-15 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9217997&HistoricalAwards=false
• 关键词: NSF; CGP; Science; Fellowhip; Program

WPC 2 B J Z Courier #| x ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 6 V Z Courier ? x x x , ._ x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 * F Z : #| x INT 9217997 Tu This award supports a two year continuing grant under the NSF CGP (Center for Global Partnership) Science Fellowship Program for Professor Charles W. Tu, Department of Electrical and Computer Engineering, University of California, San Diego. During two three month visits to Japan in 1993 and 1994, Professor Tu will work with Dr. Yunosuke Makita, Optoelectronics Division, Electrotechnical Laboratory (ETL), The Agency of Industrial Science and Technology, MITI, located in Tsukuba Science City. The focus of this project will be in growing Inx Ga1 xAs by molecular beam epitaxy (MBE) with in situ carbon ion implantation for a wide range of composition x on GaAs and InP substrates. Carbon doped Inx Ga1 xAs is important as a base layer in hererojunction bipolar transistors (HBT) because carbon has a much lower diffusivity than other commonly used p type dopants, making a thin base with extremely high doping concentration possible for high performance HBT's. Carbon ion implantation may be an effective method of introducing active carbon dopants into the films, as compared to some of the other techniques. The combined ion beam MBE system at ETL offers a unique opportunity to investigate this scientifically interesting and technologically important materials problem. Extensive charactrization, including structural, electrical, and optical measurements and some device fabrication, will be performed both at ETL and at the Un iversity of California, San Diego.

WPC 2 B J Z 编号|X ._ X 6 X @ `7 X @ 惠普LaserJet 4 HPLAS4.PRS X @ \ X @ 2 6 V Z 快递 ? x x x， ._ X 6 X @ `7 X @ 惠普LaserJet 4 HPLAS4.PRS X @ \ X @ 2 * F Z : #|X INT 9217997 Tu该奖项支持美国国家科学基金会CGP（全球合作中心）科学奖学金计划下的查尔斯W。屠，加州大学圣地亚哥分校电气与计算机工程系。 在一九九三年及一九九四年两次为期三个月的访日期间，屠教授将与位于筑波科学城的通产省工业科学技术厅电工实验室光电部的Yunosuke Makita博士合作。 该项目的重点将是在生长铟镓xAs的分子束外延（MBE）与原位碳离子注入的组成x范围广泛的GaAs和InP衬底。 碳掺杂的InxGa 1 xAs作为异质结双极晶体管（HBT）中的基极层是重要的，因为碳具有比其它常用的p型掺杂剂低得多的扩散率，使得具有极高掺杂浓度的薄基极对于高性能HBT是可能的。 与其它一些技术相比，碳离子注入可以是将活性碳掺杂剂引入到膜中的有效方法。 ETL的组合离子束MBE系统提供了一个独特的机会来研究这个科学上有趣和技术上重要的材料问题。 将在ETL和圣地亚哥的加州大学进行广泛的表征，包括结构、电学和光学测量以及一些器件制造。