ENGINEERING RESEARCH EQUIPMENT: Low-Energy Ion Gun System for Growing III-V Nitrides
ENGINEERING RESEARCH EQUIPMENT: Low-Energy Ion Gun System for Growing III-V Nitrides
批准号:
9412073
负责人:
Charles Tu
金额:
$10.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-10-01 至 1996-12-31
中文摘要
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英文摘要
9412073 Tu The Department of Electrical and Computer Engineering at the University of California, San Diego (UCSD) proposes to purchase a high-current, low-energy ion gun system for growing large-bandgap III-V nitrides for high-temperature electronic and blue emission optoelectronic applications. With mass separation, the desired species can be selected to reduce background impurity contamination. At energies below the damage threshold and higher than the expitaxial growth threshold, and undamaged epitaxial layer can be achieved. With a large ion-beam current, the growth rate can be substantial and practical. This new capability of growing nitrides will allow a number of faculty members to pursue--in a comprehensive and cohesive manner-issues in growth, characterization, and processing; for example, the initial stage of epitaxy by scanning tunneling microscopy; Schottky barrier height and ohmic contacts; and dry etching characteristics. ***
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依托单位:
国内基金
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