ENGINEERING RESEARCH EQUIPMENT: Low-Energy Ion Gun System for Growing III-V Nitrides

工程研究设备：用于生长 III-V 族氮化物的低能离子枪系统

• 批准号: 9412073
• 负责人: Charles Tu
• 金额: $ 10万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-10-01 至 1996-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9412073&HistoricalAwards=false
• 关键词: ENGINEERING; RESEARCH; EQUIPMENT; Low; Energy

9412073 Tu The Department of Electrical and Computer Engineering at the University of California, San Diego (UCSD) proposes to purchase a high-current, low-energy ion gun system for growing large-bandgap III-V nitrides for high-temperature electronic and blue emission optoelectronic applications. With mass separation, the desired species can be selected to reduce background impurity contamination. At energies below the damage threshold and higher than the expitaxial growth threshold, and undamaged epitaxial layer can be achieved. With a large ion-beam current, the growth rate can be substantial and practical. This new capability of growing nitrides will allow a number of faculty members to pursue--in a comprehensive and cohesive manner-issues in growth, characterization, and processing; for example, the initial stage of epitaxy by scanning tunneling microscopy; Schottky barrier height and ohmic contacts; and dry etching characteristics. ***

9412073 Tu加州大学圣地亚哥分校（UCSD）的电气和计算机工程系提议购买一种高电流、低能量的离子枪系统，用于生长高温电子和蓝光光电应用的大带隙III-V族氮化物。 通过质量分离，可以选择所需的物质以减少背景杂质污染。 在低于损伤阈值和高于外延生长阈值的能量下，可以获得未损伤的外延层。 在大的离子束电流下，生长速率可以是实质性的和实用的。 这种生长氮化物的新能力将允许一些教师追求-在一个全面的和有凝聚力的方式-问题的增长，表征和处理，例如，外延的初始阶段，通过扫描隧道显微镜;肖特基势垒高度和欧姆接触;和干蚀刻特性。 ***