REG:High Pressure Reactor for the Synthesis of Thin Film Oxidesfor Electronic Device Applications

使用非常高的压力来改变反应 动力学和热力学是众所周知的 这一概念很少用于 薄膜生长 在这份提案中，我们要求 部分资金用于收购高 用于合成薄的压力反应器系统 生长压力高达20，000 psi. 这个设施可以让我们扩大 并加强目前对高压的研究 薄膜氧化合成 初步 实验表明，高压 氧化处理允许使用低得多的 最小化的处理温度 衬底材料与薄膜之间的相互作用 薄膜覆盖层。 在一个项目中， 证明了这种技术的实用性， IV族异质结构钝化 半导体系统 它也代表了一部小说 合成氧化物薄膜的方法 光学、电子、铁电和 超导应用

The use of very high pressures to modify reaction kinetics and thermodynamics is a well known concept that has been rarely used in the context of thin film growth. In this proposal we request partial funding for the acquisition of a high pressure reactor system for the synthesis of thin film oxides at growth pressures as high as 20,000 psi. This facility will allow us to expand the scope and enhance current research into high pressure thin film oxidation synthesis. Preliminary experiments have shown that high pressure oxidation processing allows the use of much lower processing temperatures which minimize interactions between substrate materials and thin film overlayers. In one project, we have demonstrated the utility of this technique for the passivation of Group IV heterostructure semiconductor systems. It also represents a novel method for the synthesis of oxide thin films for optical, electronic, ferroelectric, and superconducting applications.