REG:High Pressure Reactor for the Synthesis of Thin Film Oxidesfor Electronic Device Applications

使用非常高的压力来改变反应动力学和热力学是一个众所周知的概念，但很少在薄膜生长的背景下使用。在本提案中，我们要求部分资金用于购买高压反应器系统，用于在高达20,000 psi的生长压力下合成薄膜氧化物。该设施将使我们能够扩大范围并加强目前对高压薄膜氧化合成的研究。初步实验表明，高压氧化处理允许使用更低的加工温度，从而最大限度地减少衬底材料和薄膜覆盖层之间的相互作用。在一个项目中，我们已经证明了这种技术在IV族异质结构半导体系统钝化中的应用。它也代表了一种合成用于光学、电子、铁电和超导应用的氧化薄膜的新方法。

The use of very high pressures to modify reaction kinetics and thermodynamics is a well known concept that has been rarely used in the context of thin film growth. In this proposal we request partial funding for the acquisition of a high pressure reactor system for the synthesis of thin film oxides at growth pressures as high as 20,000 psi. This facility will allow us to expand the scope and enhance current research into high pressure thin film oxidation synthesis. Preliminary experiments have shown that high pressure oxidation processing allows the use of much lower processing temperatures which minimize interactions between substrate materials and thin film overlayers. In one project, we have demonstrated the utility of this technique for the passivation of Group IV heterostructure semiconductor systems. It also represents a novel method for the synthesis of oxide thin films for optical, electronic, ferroelectric, and superconducting applications.