Metal/Indium-Zinc Oxide Semiconductor Heterostructures: A Platform for Radio-Frequency Devices

金属/氧化铟锌半导体异质结构：射频器件平台

• 批准号: 1409590
• 负责人: David Paine
• 金额: $ 30万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2018-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1409590&HistoricalAwards=false
• 关键词: Metal; Indium; Zinc; Oxide; Semiconductor

Non-Technical Description: Semiconducting materials are an essential component of all modern electronics. In recent years, a new class of amorphous oxide based semiconducting materials has emerged. These materials are unique in that they can be deposited at room temperature on many solid surfaces while maintaining good electrical properties. The first application of such amorphous metal oxides has been in flat panel displays. The aim of this research project is to explore the fundamental materials science of miniaturized amorphous oxide devices integrated with new types of dielectric oxides. The structures can be made near room temperature and may enable an entirely new approach to design of electronic devices operating at radio frequencies for potential applications ranging from cell phones to satellites. Further, the combination of fundamental materials science and prototype device fabrication has educational impacts in and out of the classroom at Brown University. For instance, the low-cost, low-temperature amorphous oxide technology makes it ideal for a prototype fabrication lab in an undergraduate course on electronic materials and devices.Technical Description: Indium zinc oxide (IZO) in the amorphous form can be deposited at room temperature and achieve a high charge carrier density. This control over charge carrier density during and after deposition, combined with high mobilities, arbitrary substrate compatibility, easy regrowth and low-temperature in-situ oxidation for doping control and dielectric formation, makes these materials a promising platform for integration-ready high-current radio-frequency transistors. In this project, researchers examine the kinetics, electronic properties, and interface structure of metal/IZO formed by an in-situ self-limiting interface reaction. The goal is to achieve localized controllable ultra-high doping and self-limiting dielectric formation. The fundamental materials science knowledge obtained on reacted metal (Ti, Al) oxide/IZO interface structures is applicable to the fabrication of prototype transistors, particularly IZO-based high-current radio-frequency devices. Several critical materials challenges are low-resistance metal/IZO contacts, high and stable carrier density channels, and integration of materials with high dielectric constants. To tackle these challenges, thermodynamic/kinetic modeling of interface stability is combined with analytical techniques ranging from high-resolution transmission electron microscopy, glancing incidence angle x-ray diffraction, to interface electronic characterization techniques.

非技术描述：半导体材料是所有现代电子产品的重要组成部分。近年来，出现了一类新的非晶氧化物基半导体材料。这些材料的独特之处在于，它们可以在室温下沉积在许多固体表面上，同时保持良好的电性能。这种非晶金属氧化物的第一个应用是在平板显示器上。本研究项目旨在探索微型非晶氧化物器件与新型介电氧化物集成的基础材料科学。这种结构可以在室温附近制造，并可能为设计在无线电频率下工作的电子设备提供一种全新的方法，用于从手机到卫星的潜在应用。此外，基础材料科学和原型设备制造的结合在布朗大学的课堂内外都对教育产生了影响。例如，低成本、低温的非晶氧化物技术使其成为电子材料和器件本科课程中原型制造实验室的理想选择。技术描述：无定形氧化铟锌（IZO）可以在室温下沉积，并获得高载流子密度。这种在沉积过程中和沉积后对载流子密度的控制，加上高迁移率、任意衬底兼容性、易于再生和用于掺杂控制和介电形成的低温原位氧化，使这些材料成为集成就绪的大电流射频晶体管的有前途的平台。在这个项目中，研究人员研究了由原位自限制界面反应形成的金属/IZO的动力学、电子性质和界面结构。目标是实现局部可控的超高掺杂和自限介电形成。在反应金属（Ti, Al）氧化物/IZO界面结构上获得的基本材料科学知识适用于原型晶体管的制造，特别是基于IZO的大电流射频器件。几个关键的材料挑战是低电阻金属/IZO触点，高和稳定的载流子密度通道，以及高介电常数材料的集成。为了应对这些挑战，界面稳定性的热力学/动力学建模与高分辨率透射电子显微镜、掠射角x射线衍射、界面电子表征技术等分析技术相结合。