Application of Novel High Pressure Synthesis Techniques to Multicomponent Thin Film Systems

基础研究旨在了解使用高压技术氧化多组分材料系统（SiGe和SiC）的化学和微观结构特征。高压技术允许合成没有天然类似物的化学亚稳材料，并提供了评估等温条件下反应速率对界面形态发展的影响的能力。这项研究有望提供对电子领域重要的多组分材料系统的基本理解。所获得的理解将有助于半导体器件的设计和制造。研究结果对大规模、高速集成电路技术具有普遍意义。

Fundamental research directed toward understanding both the chemical and micro-structural features of the oxidation of multicomponent materials systems(SiGe and SiC) using high pressure techniques is being carried out. The high pressure technique allows the synthesis of chemically metastable materials that have no natural analogs, and offers the ability to assess the effect of reaction rates under isothermal conditions on the development of interface morphology. %%% This research is expected to provide fundamental understanding of multicomponent materials systems important to the electronics field. The understanding gained will be helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.