Application of Novel High Pressure Synthesis Techniques to Multicomponent Thin Film Systems

基础研究旨在了解 氧化的化学和微观结构特征 多组分材料系统（SiGe和SiC）， 技术正在实施。 高压技术 允许合成化学亚稳态材料， 没有天然的类似物，并提供了评估效果的能力， 反应速率在等温条件下的发展， 界面形态 %%% 这项研究预计将提供基本的了解， 对电子学很重要的多组分材料系统 领域 所获得的理解将有助于半导体 器件设计和制造。 结果将是重要的 在一般的方式，以大规模，高速度的技术 集成电子电路

Fundamental research directed toward understanding both the chemical and micro-structural features of the oxidation of multicomponent materials systems(SiGe and SiC) using high pressure techniques is being carried out. The high pressure technique allows the synthesis of chemically metastable materials that have no natural analogs, and offers the ability to assess the effect of reaction rates under isothermal conditions on the development of interface morphology. %%% This research is expected to provide fundamental understanding of multicomponent materials systems important to the electronics field. The understanding gained will be helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.