Far Infrared Spectroscopy of Semiconductors at Large Hydrostatic Pressures

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This project is concerned with the far infrared properties of a number of semiconductors at large hydrostatic pressures. High resolution far infrared Fourier transform spectroscopy of ground state to bound excited state transitions of donors associated with conduction band minima which become global minima at large hydrostatic pressures will be performed. The effect of hydrogen on the formation of DX-centers in gallium arsenide and other compound semiconductors wil be studied. Th formation of DX-centers in gallium arsenide alloyed with aluminum presents a major technical problem in the design and fabrication of a number of optoelectronic devices. These novel studies promise to yield important data on the band structure and on dopants and defects at large hydrostatic pressures. This effort is made possible through advances in the design of high pressure diamond anvil cells and sensitive far infrared photoconductive detectors.