Far Infrared Spectroscopy of Semiconductors at Large Hydrostatic Pressures

大静水压力下半导体的远红外光谱

• 批准号: 9115856
• 负责人: Eugene Haller
• 金额: $ 24万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1995-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9115856&HistoricalAwards=false
• 关键词: Far; Infrared; Spectroscopy; Semiconductors; Large

This project is concerned with the far infrared properties of a number of semiconductors at large hydrostatic pressures. High resolution far infrared Fourier transform spectroscopy of ground state to bound excited state transitions of donors associated with conduction band minima which become global minima at large hydrostatic pressures will be performed. The effect of hydrogen on the formation of DX-centers in gallium arsenide and other compound semiconductors wil be studied. Th formation of DX-centers in gallium arsenide alloyed with aluminum presents a major technical problem in the design and fabrication of a number of optoelectronic devices. These novel studies promise to yield important data on the band structure and on dopants and defects at large hydrostatic pressures. This effort is made possible through advances in the design of high pressure diamond anvil cells and sensitive far infrared photoconductive detectors.

该项目涉及的远红外特性的一个 大量的半导体在大静水压力。 高 地面分辨率远红外傅里叶变换光谱 态到束缚激发态的跃迁 导带最小值变成全局最小值 将进行流体静压。 氢气对 砷化镓和其它化合物中DX中心形成 半导体将被研究。 DX心的形成 砷化镓铝合金是一种主要的技术 在设计和制造一些光电 装置. 这些新的研究有望产生重要的数据， 能带结构和掺杂剂和缺陷在大流体静力学 压力 这一努力是通过以下方面的进展实现的： 高压金刚石对顶砧及敏感元件的设计 红外光电导探测器