Diffusion Studies and Defect Spectroscopy with Isotopically Controlled Semiconductors

同位素控制半导体的扩散研究和缺陷光谱学

• 批准号: 0109844
• 负责人: Eugene Haller
• 金额: $ 30万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-11-01 至 2004-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109844&HistoricalAwards=false
• 关键词: Diffusion; Studies; Defect; Spectroscopy; Isotopically

This individual investigator award will fund research focussing on self- and dopant atom transport in crystalline elemental and compound semiconductors at the atomic level. Multilayer structures consisting of different stable isotopes (e.g., 28Si and 30Si) will be doped such that the equilibrium native defect concentrations remain undisturbed by the doping process. Secondary ion mass spectrometry (SIMS) will be used to measure directly and simultaneously the concentration profiles of the host crystal isotopes and the dopant atoms as a function of depth after thermal treatment for specific times. Analysis of these concentration profiles leads to a quantitative understanding of matter transport properties. Specifically, the charge states and the diffusivity of the native defects controlling the matter transport will be determined as a function of temperature and the position of the Fermi level. The knowledge gained from these studies will be used in the formation and the study of isotopically controlled semiconductor nanostructures. Neutron transmutation will allow the doping of these crystalline nano particles at ambient temperature. The basic parameters to be determined in this research effort will benefit directly the understanding of the stability of semiconductor nano particles and the advanced modeling of future generations of semiconductor devices. Graduate and undergraduate students will be intimately involved in all aspects of this research.%%%The ever increasing performance of semiconductor devices is, in large part, due to the reduction in device dimensions and the concomitant possibility to place more functions on a chip. Introducing the dopant atoms which give semiconductor devices their functionality, is reaching limits which can only be overcome by a fundamental study of dopant atom transport at atomic dimensions. Because dopant atoms move assisted by native defects such as vacancies and/or self-interstitials, it is crucial for the understanding of the atomic transport to measure simultaneously the motion of the dopant and of the host lattice atoms. This can be achieved for the first time through the use of crystalline multilayer structures consisting of different isotopes of the host semiconductor crystal. This individual investigator award will support research using secondary ion mass spectrometry to measure dopant and isotope concentration profiles after exposure of the semiconductor structures to elevated temperatures for specific times. The results of these studies will form the basis for the advanced understanding of both matter transport parameters required for processing of future semiconductor devices and the stability of semiconductor nano particles. The graduate and undergraduate students performing this research will obtain the training required for challenging positions in the semiconductor industry and in academia.***

这一个人研究人员奖将资助在原子水平上关注晶体元素和化合物半导体中自原子和掺杂原子传输的研究。由不同稳定同位素(如28Si和30Si)组成的多层结构将被掺杂，以使平衡的本征缺陷浓度保持不受掺杂过程的干扰。二次离子质谱仪(SIMS)将被用来直接和同时测量主晶同位素和掺杂原子在特定时间热处理后随深度变化的浓度分布。对这些浓度分布的分析有助于对物质传输特性的定量理解。具体地说，控制物质传输的本征缺陷的电荷态和扩散系数将作为温度和费米能级位置的函数来确定。从这些研究中获得的知识将用于同位素控制半导体纳米结构的形成和研究。中子变形将允许在常温下掺杂这些结晶纳米粒子。在这项研究工作中确定的基本参数将直接有助于了解半导体纳米粒子的稳定性和对未来几代半导体器件的高级建模。研究生和本科生将密切参与这项研究的所有方面。%半导体器件性能的不断提高在很大程度上是由于器件尺寸的减小以及随之而来的在芯片上放置更多功能的可能性。引入掺杂原子赋予半导体器件其功能，正在达到只有通过对掺杂原子在原子维度上的输运进行基础研究才能克服的极限。由于掺杂原子在空位和/或自间隙等本征缺陷的辅助下运动，因此同时测量掺杂原子和基质晶格原子的运动对于理解原子输运是至关重要的。这可以第一次通过使用由宿主半导体晶体的不同同位素组成的晶体多层结构来实现。这项个人研究人员奖将支持使用二次离子质谱仪测量半导体结构在高温下暴露特定时间后的掺杂和同位素浓度分布的研究。这些研究的结果将为进一步了解未来半导体器件加工所需的物质传输参数和半导体纳米粒子的稳定性奠定基础。进行这项研究的研究生和本科生将获得在半导体行业和学术界具有挑战性的职位所需的培训。*