States of Hydrogen in Semiconductors

深入实验和理论研究氢在半导体单晶中的作用，半导体单晶是最纯净和结构最完美的材料。近年来，对硅、锗和砷化镓中许多含氢杂质和缺陷配合物的研究获得了重要的科学技术信息。计划是调查其中一些复合物的形成和详细结构。部分氢钝化多价受体的红外光谱资料表明，静态中心和动态中心都存在。另一方面，关于电非活性中心的信息非常有限。他们将利用局部振动模式光谱和单轴应力来确定完全钝化掺杂剂的结构。拉曼光谱和EPR光谱将用于特殊情况。将提出各种配置的建模和计算，并与数据进行密切比较。同时，还将研究不同的氢引入机制。氢射频等离子体，电解和化学机械抛光似乎都导致氢化和相关的掺杂钝化。将尝试验证最近的猜想和理论计算，这些猜想和理论计算给出了氢电荷状态作为半导体费米能级的函数。将结合这些实验考察各种理论机制。该结果对半导体技术中的许多工艺，如等离子体沉积、蚀刻、氧化和离子注入具有重要意义。这些过程中的大多数都有意无意地涉及到氢。提高对其在半导体中的作用的理解对于未来基于硅和砷化镓的器件的成功开发是必要的。

In-depth experimental and theoretical studies of the role of hydrogen in semiconductor single crystals, the purest and structurally most perfect materials, will be made. Important scientific and technical information has been gained recently from the study of many hydrogen-containing impurity and defect complexes in silicon, germanium, and gallium arsenide. The plan is to investigate the formation and detailed structure of some of these complexes. Recent IR spectroscopy information on partially hydrogen-passivated multivalent acceptors indicates the existence of both static and dynamic centers. Information on electrically non-active centers on the other hand is very limited. They will make use of local vibrational mode spectroscopy, together with uniaxial stress, to determine the structure of fully passivated dopants. Raman and EPR spectroscopies will be used in special cases. Modelling and calculations for various configurations will be proposed and carried out in close comparison with the data. In a parallel effort an investigation of various hydrogen- introduction mechanisms will be made. Hydrogen RF plasmas, electrolysis and chemo-mechanical polishing all seem to lead to hydrogenation and associated dopant passivation. Attempts will be made to verify recent conjectures and theoretical calculations that give the hydrogen charge state as a function of the semiconductor Fermi level. Various theoretical mechanisms will be examined in connection with these experiments. Results should be of significance for many processes in semiconductor technology, such as plasma deposition, etching, oxidation, and ion implantation. Most of these processes involve, intentionally of unintentionally, hydrogen. An improved understanding of its role in semiconductors is necessary for the successful development of future silicon and gallium arsenide based devices.