States of Hydrogen in Semiconductors

半导体中的氢状态

• 批准号: 8806756
• 负责人: Eugene Haller
• 金额: $ 27.84万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-08-15 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8806756&HistoricalAwards=false
• 关键词: States; Hydrogen; Semiconductors

In-depth experimental and theoretical studies of the role of hydrogen in semiconductor single crystals, the purest and structurally most perfect materials, will be made. Important scientific and technical information has been gained recently from the study of many hydrogen-containing impurity and defect complexes in silicon, germanium, and gallium arsenide. The plan is to investigate the formation and detailed structure of some of these complexes. Recent IR spectroscopy information on partially hydrogen-passivated multivalent acceptors indicates the existence of both static and dynamic centers. Information on electrically non-active centers on the other hand is very limited. They will make use of local vibrational mode spectroscopy, together with uniaxial stress, to determine the structure of fully passivated dopants. Raman and EPR spectroscopies will be used in special cases. Modelling and calculations for various configurations will be proposed and carried out in close comparison with the data. In a parallel effort an investigation of various hydrogen- introduction mechanisms will be made. Hydrogen RF plasmas, electrolysis and chemo-mechanical polishing all seem to lead to hydrogenation and associated dopant passivation. Attempts will be made to verify recent conjectures and theoretical calculations that give the hydrogen charge state as a function of the semiconductor Fermi level. Various theoretical mechanisms will be examined in connection with these experiments. Results should be of significance for many processes in semiconductor technology, such as plasma deposition, etching, oxidation, and ion implantation. Most of these processes involve, intentionally of unintentionally, hydrogen. An improved understanding of its role in semiconductors is necessary for the successful development of future silicon and gallium arsenide based devices.

深入的实验和理论研究的作用 氢在半导体单晶中，最纯净， 结构上最完美的材料，将被制造出来。 重要 最近获得了科学和技术信息 通过对许多含氢杂质和缺陷的研究， 硅、锗和砷化镓中的复合物。 该计划 是研究一些 这些复合物。 最近的红外光谱信息 部分氢钝化的多价受体表明 静态中心和动态中心的存在。 信息 另一方面，非电活性中心非常 有限公司 他们将利用本地振动模式 光谱，连同单轴应力，以确定 完全钝化的掺杂剂的结构。 拉曼和EPR 在特殊情况下将使用光谱法。 建模和 将提出各种配置的计算， 与数据进行了密切比较。 在一个平行的努力，各种氢的调查- 将建立引进机制。 氢射频等离子体， 电解和化学机械抛光似乎都导致 氢化和相关掺杂剂钝化。 尝试将 以验证最近的测量和理论计算 给出了氢的电荷状态， 半导体费米能级 各种理论机制将 与这些实验有关的检查。 结果应 对于半导体中的许多工艺具有重要意义 技术，例如等离子体沉积、蚀刻、氧化和 离子注入 这些过程中的大多数都是有意地 无意中，氢。 更好地理解其 在半导体中的作用是成功的必要条件。 未来硅和砷化镓基器件的发展。