Diffusion Studies and Defect Spectroscopy with Isotopically Controlled Semiconductors

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9732707 Haller This condensed matter physics project uses separated isotopes to investigate self-diffusion under equilibrium and non-equilibrium conditions. In addition, local vibrational mode spectroscopy will be used to investigate low atomic mass impurities. The self-diffusion constants of (a) gallium in aluminum-gallium-arsenic heterostructures, (b) silicon in silicon epilayers, and (c) gallium and antimony in gallium antimonide heterostructures will be derived from secondary ion mass spectroscopy profiles. The temperature, alloy composition and doping dependencies of the diffusion constants will be investigated. These data are critical for the basic understanding of fundamental mass transport in solids and for development of a comprehensive model of diffusion in semiconductors. Future device processing models are expected to profit directly from these quantitative results. The vibrational mode spectroscopy experiments are designed to provide information about defect structures, lattice dynamics and atomic arrangements at defect sites in semiconductors. The work provides a valuable arena for training graduate students in both advanced technology and fundamental physics. %%% This condensed matter physics project uses separated isotopes to investigate self-diffusion under equilibrium and non-equilibrium conditions. In addition, local vibrational mode spectroscopy will be used to investigate low atomic mass impurities. The self-diffusion constants of (1) gallium in aluminum-gallium-arsenic heterostructures, (2) silicon in silicon epilayers, and (3) gallium and antimony in gallium antimonide heterostructures will be derived from secondary ion mass spectroscopy profiles. The temperature, alloy composition and doping dependencies of the diffusion constants will be investigated. These data are critical for the basic understanding of fundamental mass transport in solids and for development of a comprehensive model of diffusion in semiconductors. Future device processing models are expected to profit directly from these quantitative results. The vibrational mode spectroscopy experiments are designed to provide information about defect structures, lattice dynamics and atomic arrangements at defect sites in semiconductors. The work provides a valuable arena for training graduate students in both advanced technology and fundamental physics. ***