U.S.-Mexico Cooperative Science: Quantum States of Shallow Impurities in Wide Band Gap Semiconductors

9415824 Haller这一美洲计划奖将支持加州大学伯克利分校的Eugene Haller博士和墨西哥圣路易斯波托西科学和通信光学研究所的Hugo Navarro-Contrera博士就宽带隙半导体中浅杂质的量子态的表征和研究进行合作研究。在这项研究中使用的技术是远红外和光热电离光谱。其目的是尽可能多地了解杂质的量子性质，并建立杂质原子与待研究材料中其他缺陷之间的可能联系。宽带隙材料在要求苛刻的电子应用和可见光发射体方面具有潜在的应用价值。目前，许多研究小组都在关注宽带隙蓝光发光半导体材料的生长，这些材料可以用来制造蓝光二极管和半导体激光器。这些材料在发光器件中的应用受到多种因素的阻碍，其中包括生长高质量单晶外延层所遇到的困难。近年来，制备出了相对较好的样品，但对这些材料中掺杂杂质的光谱性质知之甚少。将在本研究中使用的光谱技术将提供有关这些杂质性质的新的和高度相关的信息。***

9415824 Haller This Americas Program award will support collaborative research between Dr. Eugene Haller, University of California, Berkeley, and Dr. Hugo Navarro-Contreras, Instituto de Investigaciones Cientificas en Comunicacion Optica, San Luis Potosi, Mexico, on the characterization and study of the quantum states of shallow impurities in wide bandgap semiconductors. Techniques to be used in this research are far-infrared and photothermal ionization spectroscopy. The aim is to gain as much understanding as possible of the impurities' quantum nature and to establish a possible association between impurity atoms and other defects in the materials to be studied. Wide-bandgap materials are potentially useful for demanding electronic applications and as visible optical emitters. At present, many research groups are focusing on the growth of wide-bandgap blue-emitting semiconductor materials that could be used to fabricate blue light-emitting diodes and semiconductor lasers. The application of these materials to light-emitting devices is hindered by several factors, among them, the difficulties encountered in growing high quality single crystalline epilayers. Recently, preparation of relatively good samples has been achieved, but very little is known about the spectroscopic properties of dopant impurities in these materials. The spectroscopic techniques to be used in the present study will provide new and highly relevant information concerning the nature of these impurities. ***