U.S.-Mexico Cooperative Science: Quantum States of Shallow Impurities in Wide Band Gap Semiconductors

美国-墨西哥合作科学：宽带隙半导体中浅层杂质的量子态

• 批准号: 9408165
• 负责人: Eugene Haller
• 金额: $ 3万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-03-01 至 1999-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9408165&HistoricalAwards=false
• 关键词: U.S.; Mexico; Cooperative; Science; Quantum

9415824 Haller This Americas Program award will support collaborative research between Dr. Eugene Haller, University of California, Berkeley, and Dr. Hugo Navarro-Contreras, Instituto de Investigaciones Cientificas en Comunicacion Optica, San Luis Potosi, Mexico, on the characterization and study of the quantum states of shallow impurities in wide bandgap semiconductors. Techniques to be used in this research are far-infrared and photothermal ionization spectroscopy. The aim is to gain as much understanding as possible of the impurities' quantum nature and to establish a possible association between impurity atoms and other defects in the materials to be studied. Wide-bandgap materials are potentially useful for demanding electronic applications and as visible optical emitters. At present, many research groups are focusing on the growth of wide-bandgap blue-emitting semiconductor materials that could be used to fabricate blue light-emitting diodes and semiconductor lasers. The application of these materials to light-emitting devices is hindered by several factors, among them, the difficulties encountered in growing high quality single crystalline epilayers. Recently, preparation of relatively good samples has been achieved, but very little is known about the spectroscopic properties of dopant impurities in these materials. The spectroscopic techniques to be used in the present study will provide new and highly relevant information concerning the nature of these impurities. ***

小行星9415824 该美洲计划奖将支持加州大学伯克利分校的尤金哈勒博士和墨西哥圣刘易斯波托西光学通信科学研究所的雨果·纳瓦罗-孔特雷拉斯博士之间的合作研究，对宽带隙半导体中浅杂质的量子态进行表征和研究。 在这项研究中使用的技术是远红外和光热电离光谱。 目的是尽可能多地了解杂质的量子性质，并建立杂质原子与待研究材料中其他缺陷之间的可能关联。 宽带隙材料对于要求苛刻的电子应用和作为可见光发射器是潜在有用的。 目前，许多研究小组都在关注宽带隙蓝光半导体材料的生长，这些材料可用于制造蓝光发光二极管和半导体激光器。 这些材料在发光器件中的应用受到几个因素的阻碍，其中之一是在生长高质量单晶外延层时遇到的困难。 最近，相对较好的样品的制备已经实现，但很少有人知道这些材料中的掺杂剂杂质的光谱特性。 本研究中使用的光谱技术将提供有关这些杂质性质的新的和高度相关的信息。 ***