Solid State Studies with Isotopically Engineered Semiconductors

9417763具有同位素控制成分的单晶(块状和层状结构)的特殊性质将用于自体和掺杂扩散研究。用二次离子质谱仪研究了单层厚度约200纳米的70Ge 74Ge超晶格的内部同位素界面。第二阶段将研究具有更复杂扩散过程的材料。第二至第六类直接带隙锌基化合物和氮化镓，蓝光发射体，将与单同位素掺杂剂掺杂。我们将使用局域振动模式光谱对它们进行研究。由同位素控制引起的杂质谱的简化为理解局域杂质结构提供了一个新的水平。这些结果可能会改进设备的建模，使设备的维度不断减少，复杂性不断增加。冷战的结束开启了从俄罗斯和乌克兰获得大量高浓缩度同位素半导体材料的可能性。这些同位素纯材料将被用来以一种全新的方式研究原子扩散。薄膜晶体生长将形成相同元素(如Ge 70和Ge 74)的不同同位素的多层膜。界面处的互扩散将使用二次离子质谱仪进行研究。在研究了化学纯同位素结构之后，还将研究一些用于光电子学应用的新型半导体的掺杂体系和多层膜。还将研究同位素纯半导体中一系列低质量杂质的振动光谱。其结果将导致电子设备建模的改进，每个设备的维度都在减少，而复杂性都在增加。***

9417763 Haller The special properties of single crystals (bulk and Layered structures) with isotopically controlled composition will be used in self and dopant diffusion studies. Internal isotope interfaces in superlattices of 70Ge 74Ge with approximately 200 nanometer thick individual layers will be investigated by Secondary Ion Mass Spectroscopy. Materials with more complicated diffusion processes will be studied in the second phase. Group II-VI direct bandgap zinc based compounds and gallium nitride, blue light emitters, will be doped with mono-isotope dopants. They will be investigated using local vibrational mode spectroscopy. The simplification in impurity spectra caused by isotope control promises a new level of understanding of the local impurity structure. The results may lead to improved modeling of devices with ever decreasing dimensions and increasing complexity. %%% The end of the cold war has opened up the possibility of obtaining large quantities of isotopically highly enriched semiconductor materials from Russia and the Ukraine. These isotopically pure materials will be used to study atomic diffusion in a completely new way. Multilayers of different isotopes of the same elements (e.g. germanium 70 and 74) will be formed by thin film crystal growth. Interdiffusion at the interface will be investigated using Secondary Ion Mass Spectroscopy. After studying chemically pure isotope structures, doped systems and mutlilayers of some new semiconductors used in optoelectronics applications will be studied. The vibrational; spectra of a range of low mass impurities in isotopically pure semiconductors will also be investigated. The results will lead to improved modeling of electronic devices with every decreasing dimensions and increasing complexity. ***