Solid State Studies with Isotopically Engineered Semiconductors

小行星9417763 具有同位素控制成分的单晶（块状和层状结构）的特殊性质将用于自扩散和掺杂剂扩散研究。 内部同位素界面超晶格70 Ge-74 Ge约200纳米厚的个别层将由二次离子质谱研究。 第二阶段将研究扩散过程更复杂的材料。 II-VI族直接带隙锌基化合物和氮化镓（蓝光发射体）将掺杂有单同位素掺杂剂。 他们将使用本地振动模式光谱研究。 由同位素控制引起的杂质谱的简化使我们对局部杂质结构的理解达到了一个新的水平。 这些结果可能会导致改进的建模与不断减少的尺寸和增加的复杂性的设备。 冷战的结束为从俄罗斯和乌克兰获得大量同位素高度浓缩的半导体材料提供了可能性。 这些同位素纯材料将以一种全新的方式用于研究原子扩散。 相同元素（例如锗70和74）的不同同位素的多层将通过薄膜晶体生长形成。 将使用二次离子质谱法研究界面处的相互扩散。 在研究了化学纯同位素结构之后，我们将研究用于光电子学应用的一些新型半导体的掺杂体系和多层结构。 振动光谱的同位素纯半导体中的低质量杂质的范围也将进行调查。 结果将导致改进的电子设备的建模与每一个减少的尺寸和增加的复杂性。 ***

9417763 Haller The special properties of single crystals (bulk and Layered structures) with isotopically controlled composition will be used in self and dopant diffusion studies. Internal isotope interfaces in superlattices of 70Ge 74Ge with approximately 200 nanometer thick individual layers will be investigated by Secondary Ion Mass Spectroscopy. Materials with more complicated diffusion processes will be studied in the second phase. Group II-VI direct bandgap zinc based compounds and gallium nitride, blue light emitters, will be doped with mono-isotope dopants. They will be investigated using local vibrational mode spectroscopy. The simplification in impurity spectra caused by isotope control promises a new level of understanding of the local impurity structure. The results may lead to improved modeling of devices with ever decreasing dimensions and increasing complexity. %%% The end of the cold war has opened up the possibility of obtaining large quantities of isotopically highly enriched semiconductor materials from Russia and the Ukraine. These isotopically pure materials will be used to study atomic diffusion in a completely new way. Multilayers of different isotopes of the same elements (e.g. germanium 70 and 74) will be formed by thin film crystal growth. Interdiffusion at the interface will be investigated using Secondary Ion Mass Spectroscopy. After studying chemically pure isotope structures, doped systems and mutlilayers of some new semiconductors used in optoelectronics applications will be studied. The vibrational; spectra of a range of low mass impurities in isotopically pure semiconductors will also be investigated. The results will lead to improved modeling of electronic devices with every decreasing dimensions and increasing complexity. ***