Large Gap Insulator on Gallium Arsenide and Related Materials

砷化镓大间隙绝缘体及相关材料

• 批准号: 9116436
• 负责人: Marshall Nathan
• 金额: $ 25.22万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-03-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9116436&HistoricalAwards=false
• 关键词: Large; Gap; Insulator; Gallium; Arsenide

Fundamental research on critical interfaces in thin layered structures formed from oxide films deposited in-situ on various III-V compound semiconductor surfaces with silicon interlayers will be conducted. The idea being explored is that the III-V/Silicon interface states do not pin the Fermi level, and the Si/SiO2 interface either exhibits a very low density of interface states, or a favorable energy distribution of such states in the gap, thereby making MOS structures with III-V semiconductors feasible. The objective is to understand basic factors affecting interface state density with these materials and to achieve conditions of sufficiently low(1011cm-2) values to allow effective surface potential modulation in III-V metal-oxide-semiconductor(MOS) structures. %%% This research is expected to provide deeper understanding of--and may also provide a long-sought solution to--the control and manipulation of electronic energy states of compound semiconductors at interface regions of layered structures. The results could be of particular significance to the technology of large scale, high speed integrated electronic and photonic circuits which consume low power.

将针对由原位沉积在具有硅夹层的各种 III-V 族化合物半导体表面上的氧化膜形成的薄层结构中的关键界面进行基础研究。 正在探索的想法是，III-V/硅界面态不固定费米能级，并且Si/SiO2界面要么表现出非常低的界面态密度，要么在间隙中表现出这种状态的有利能量分布，从而使III-V族半导体的MOS结构变得可行。 目的是了解影响这些材料界面态密度的基本因素，并实现足够低 (1011cm-2) 值的条件，以允许在 III-V 金属氧化物半导体 (MOS) 结构中进行有效的表面电势调制。 %%% 这项研究预计将提供对层状结构界面区域化合物半导体电子能态的控制和操纵的更深入的理解，并可能提供长期寻求的解决方案。 该研究结果对于大规模、高速低功耗集成电子和光子电路技术具有特殊意义。