Uniaxial Stress Dependent Studies Related to III-V Semiconductor Devices

与 III-V 半导体器件相关的单轴应力相关研究

• 批准号: 8803928
• 负责人: Marshall Nathan
• 金额: $ 33.17万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-11-01 至 1992-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8803928&HistoricalAwards=false
• 关键词: Uniaxial; Stress; Dependent; Studies; Related

Electrical measurements as a function of applied uniaxial stress will be made on GaAs/A1GaAs structures. Three areas will be covered: 1) Tunneling measurements. Fowler-Nordheim tunneling, single barrier direct tunneling and double barrier resonant tunneling will be studied to determine the position in crystal momentum space of the electronic states in the barrier which govern the tunneling processes. 2) DX centers. Kinetic trapping and transport measurements will be made to determine the position in crystal momentum space of the DX center and associated energy bands. 3) Pseudomorphic structures. Transport measurements will be made on lattice matched systems to simulate pseudomorphic structures to elucidate and optimize these properties.

作为所施加的单轴应力的函数的电测量将 在GaAs/A1 GaAs结构上制造。 将涵盖三个领域： 1)隧道测量。 Fowler-Nordheim隧穿，单势垒 研究了直接隧穿和双势垒共振隧穿 确定电子在晶体动量空间中的位置， 控制隧穿过程的势垒中的状态。 2)DX中心。 动力学捕获和运输测量将 确定DX在晶体动量空间中的位置 中心和相关能带。 3)假形构造 运输测量将在 晶格匹配系统来模拟赝晶结构， 阐明并优化这些性质。