Tunable Schottky Barriers

可调谐肖特基势垒

• 批准号: 9525758
• 负责人: Marshall Nathan
• 金额: $ 29.88万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-01-01 至 1999-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9525758&HistoricalAwards=false
• 关键词: Tunable; Schottky; Barriers

9525758 Nathan This research project follows a two-fold approach to achieve greater understanding and optimization of the transport properties of metal-semiconductor junctions: a)extend exploration of Schottky barrier height tuning with thin interlayers between the metal and semiconductor to consider different interlayers, semiconductors, and metals; b)examine the microscopic composition and structure of the interlayer, and the redistribution of interlayer atoms during junction fabrication and processing. The long-term practical outcome of this program may be the development of a new simple and reproducible method of tuning Schottky barriers, and the incorporation of engineered Schottky barriers in classes of prototype devices such as Schottky barrier photon detectors, metal/semiconductor/metal detectors, and MESFETs. %%% The knowledge and understanding gained from this research project is expected to contribute generally to improving the performance of advanced devices used in computing, information processing, and telecommunications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9525758 Nathan本研究项目采用双重方法，以更好地了解和优化金属-半导体结的输运特性：a)扩展利用金属和半导体之间的薄中间层来调整肖特基势垒高度的探索，以考虑不同的中间层、半导体和金属；b)检查中间层的微观组成和结构，以及在结制造和加工过程中层间原子的重新分布。该计划的长期实际成果可能是开发一种新的简单且可重复的肖特基势垒调谐方法，并在肖特基势垒光子探测器、金属/半导体/金属探测器和MESFET等原型器件中加入工程肖特基势垒。从这项研究项目中获得的知识和理解有望在总体上有助于提高用于计算、信息处理和电信的先进设备的性能。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***