SGER: Performance Enhanced Organic FETs by Built in Strain in Organic Materials

SGER：通过有机材料内置应变增强有机 FET 的性能

• 批准号: 0225025
• 负责人: Marshall Nathan
• 金额: $ 7.58万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0225025&HistoricalAwards=false
• 关键词: SGER; Performance; Enhanced; Organic; FETs

This project explores a unique materials science approach to understand and improve transport processes in organic semiconductor materials suitable for the fabrication of electronic or opto-electronic devices. The specific objective of the project is to explore and demonstrate an approach to substantially increase carrier mobility under ambient conditions in organic semiconductors by designing, fabricating, and analyzing structures with built-in strain. The proposed research is motivated by recent experimental results with pentacene. Despite recent progress in organic semiconductor materials research, electronic devices fabricated with pentacene have a primary impediment-a relatively low charge carrier mobility which appears to be limited by intermolecular charge carrier transfer. With decreasing intermolecular distances, as happens under compressive stress, and demonstrated utilizing high pressure, charge carrier mobility in organic materials increases. The research proposed here addresses this critical limitation of low mobility by exploring built-in strain enhancement under ambient pressure conditions. The approach is to deposit pentacene on bent, thinned-down Si/SiO2 substrate wafers. When the substrate is allowed to relax, compressive strain is built into the active pentacene layer. Field effect transistors will then be fabricated on this material and tested for enhanced mobility. The proposed research will explore the feasibility of such an approach through a coordinated effort involving experiment and modeling. %%% The project addresses fundamental research issues in a topical area of electronic/photonic materi-als science having technological relevance. An important feature of the project is high risk/high payoff potential with strong emphasis on education, and the integration of research and educa-tion.***

该项目探讨了一种独特的材料科学方法，以理解和改善适合于电子或光电设备制造的有机半导体材料中的传输过程。该项目的具体目的是通过设计，制造和分析内置应变的结构来探索并证明在有机半导体中的环境条件下实质上增加载流子迁移率的方法。拟议的研究是由五苯甲苯烯的最新实验结果激发的。尽管有机半导体材料研究最近取得了进展，但用五苯制造的电子设备具有主要的障碍 - 相对较低的电荷载体迁移率似乎受到分子间电荷载体传输的限制。随着在压力应力下发生的分子间距离的降低，并证明了使用高压，有机材料中的电荷载体迁移率会增加。此处提出的研究通过在环境压力条件下探索内置应变来探索内置应变，以解决低移动性的关键局限性。该方法是将五苯固定在弯曲的，变薄的Si/SiO2底物晶状体上。当允许底物放松时，将压缩应变内置在活性五苯烯层中。然后将在该材料上制造现场效应晶体管，并测试以增强迁移率。拟议的研究将通过涉及实验和建模的协调努力来探索这种方法的可行性。 %%％该项目解决具有技术相关性的电子/光子材料科学主题领域的基本研究问题。该项目的一个重要特征是高风险/高收益潜力，重点是教育以及研究和教育的整合。***