SGER: Performance Enhanced Organic FETs by Built in Strain in Organic Materials

SGER：通过有机材料内置应变增强有机 FET 的性能

• 批准号: 0225025
• 负责人: Marshall Nathan
• 金额: $ 7.58万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0225025&HistoricalAwards=false
• 关键词: SGER; Performance; Enhanced; Organic; FETs

This project explores a unique materials science approach to understand and improve transport processes in organic semiconductor materials suitable for the fabrication of electronic or opto-electronic devices. The specific objective of the project is to explore and demonstrate an approach to substantially increase carrier mobility under ambient conditions in organic semiconductors by designing, fabricating, and analyzing structures with built-in strain. The proposed research is motivated by recent experimental results with pentacene. Despite recent progress in organic semiconductor materials research, electronic devices fabricated with pentacene have a primary impediment-a relatively low charge carrier mobility which appears to be limited by intermolecular charge carrier transfer. With decreasing intermolecular distances, as happens under compressive stress, and demonstrated utilizing high pressure, charge carrier mobility in organic materials increases. The research proposed here addresses this critical limitation of low mobility by exploring built-in strain enhancement under ambient pressure conditions. The approach is to deposit pentacene on bent, thinned-down Si/SiO2 substrate wafers. When the substrate is allowed to relax, compressive strain is built into the active pentacene layer. Field effect transistors will then be fabricated on this material and tested for enhanced mobility. The proposed research will explore the feasibility of such an approach through a coordinated effort involving experiment and modeling. %%% The project addresses fundamental research issues in a topical area of electronic/photonic materi-als science having technological relevance. An important feature of the project is high risk/high payoff potential with strong emphasis on education, and the integration of research and educa-tion.***

该项目探索了一种独特的材料科学方法，以理解和改进适合制造电子或光电器件的有机半导体材料的传输过程。该项目的具体目标是通过设计、制造和分析具有内置应变的结构，探索和展示一种在环境条件下大幅提高有机半导体载流子迁移率的方法。提出的研究是由最近的实验结果，并五苯的动机。尽管近年来有机半导体材料的研究取得了进展，但用并五苯制造的电子器件存在一个主要障碍——相对较低的载流子迁移率，这似乎受到分子间载流子转移的限制。随着分子间距离的减小，如在压缩应力和高压下发生的那样，有机材料中的载流子迁移率增加。本文提出的研究通过探索环境压力条件下的内置应变增强来解决低迁移率的关键限制。该方法是将五苯沉积在弯曲的、薄化的Si/SiO2衬底晶片上。当衬底被允许松弛时，压缩应变被构建到活性五苯层中。然后将在这种材料上制造场效应晶体管并测试其增强的迁移率。该研究将通过实验和建模的协调努力来探索这种方法的可行性。该项目涉及与技术相关的电子/光子材料科学主题领域的基础研究问题。项目的一个重要特点是高风险/高回报潜力，重点是教育，科研与教育相结合