Stress Effects in III-V Heterostructures

III-V 异质结构中的应力效应

• 批准号: 9612539
• 负责人: Marshall Nathan
• 金额: $ 22.5万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-03-15 至 2001-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9612539&HistoricalAwards=false
• 关键词: Stress; Effects; III; Heterostructures

9612539 Nathan The objectives of this proposed project are to study the effect of strain on the characteristics of electronic devices made from III-V semiconductor heterostrutures, and to explore possible applications of these effects. We wil study both band structure effects and piezoelectric effects in heterostructure devices such as (interband) resonant tunneling diodes and n- and p-channel field effect transistors. Our goal will be to reach a new level of understanding that will lead to novel microsensor concepts. ***

本项目的目的是研究应变对III-V型半导体异质结构电子器件特性的影响，并探索这些影响的可能应用。我们将研究异质结构器件中的带结构效应和压电效应，如（带间）共振隧道二极管和n沟道和p沟道场效应晶体管。我们的目标是达到一个新的理解水平，这将导致新的微传感器概念。＊＊＊