Mathematical Sciences: Analysis and Simulation of Energy Models for Semiconductor Transport

点击翻译按钮获取中文摘要

This project involves mathematical analysis and simulation of two models for carrier transport. These are: the hydrodynamic model and the energy transport model (the RT model,) both for conventional devices. Simulation of HFET devices, a quantum hydrodynamic model, will also be carried out. The model provides for tunneling effects in heterogenous structures, or compound semiconductors. The algorithms to be employed for the two dimensional simulations are the essentially non-oscillatory shock capturing algorithms, and projection methods. The objective is to produce computer simulation of conventional semiconductor devices, based upon different mathematical models, by use of new algorithms developed during the last decade. A cutting edge type of diode, the so-called tunnel diode, will be studied in terms of a quantum mechanical model.