Mathematical Sciences: Analysis and Simulation of Energy Models for Semiconductor Transport

数学科学：半导体传输能量模型的分析和模拟

• 批准号: 9123208
• 负责人: Joseph Jerome
• 金额: $ 3万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1994-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9123208&HistoricalAwards=false
• 关键词: Mathematical; Sciences; Analysis; Simulation; Energy

This project involves mathematical analysis and simulation of two models for carrier transport. These are: the hydrodynamic model and the energy transport model (the RT model,) both for conventional devices. Simulation of HFET devices, a quantum hydrodynamic model, will also be carried out. The model provides for tunneling effects in heterogenous structures, or compound semiconductors. The algorithms to be employed for the two dimensional simulations are the essentially non-oscillatory shock capturing algorithms, and projection methods. The objective is to produce computer simulation of conventional semiconductor devices, based upon different mathematical models, by use of new algorithms developed during the last decade. A cutting edge type of diode, the so-called tunnel diode, will be studied in terms of a quantum mechanical model.

该项目涉及两个载体传输模型的数学分析和仿真。 它们是：传统装置的流体动力学模型和能量传输模型（RT 模型）。 还将进行 HFET 器件的模拟（量子流体动力学模型）。 该模型提供了异质结构或化合物半导体中的隧道效应。 用于二维模拟的算法本质上是非振荡冲击捕获算法和投影方法。 目标是通过使用过去十年开发的新算法，基于不同的数学模型对传统半导体器件进行计算机模拟。 将根据量子力学模型研究一种尖端类型的二极管，即所谓的隧道二极管。