Development of a High Resolution X-Ray Analysis Facility forAdvanced Materials

x射线测量为许多材料系统提供了非破坏性的结构信息。高分辨率衍射测量确定样品的完美性，成分和应变调制，以及几个原子平面上的界面突然性。X射线反射率测量处理电子密度调制和界面粗糙度在薄膜系统。这些问题与半导体外延异质结构、器件结构和块状材料的生长和加工高度相关。物理信息，包括应变和材料完美对光学和电子特性的影响，也可以定量确定。在其他领域，这些技术加强了高温合金和溶胶-凝胶沉积陶瓷薄膜的相干应变研究。在这个项目中，我们将开发一个高分辨率的x射线衍射/散射表征设备，包括高温和低温阶段。该设施应包括晶圆绘图能力和仿真软件。提出了主要的研究方向，包括硅锗多层和器件结构、HgCdTe的生长动力学和结构性质、III-V多层中应变与光学和输运性质的关系、析出硬化高温合金中的错配应变。

X-ray measurements provide non-destructive structural information for many materials systems. High resolution diffraction measurements determine sample perfection, compositional and strain modulation, and interface abruptness over a few atomic planes. X- ray reflectivity measurements address electron density modulations and interface roughness in thin film systems. Such issues are highly relevant to the growth and processing of semiconductor epitaxial heterostructures, device structures, and bulk materials. Physical information, including the effect of strain and materials perfection on optical and electronic properties, are also quantitatively determined. In other fields, these techniques enhance the study of coherency strains in superalloys and of ceramic thin films deposited by sol-gel methods. In this project, we will develop a high resolution x-ray diffraction/scattering characterization facility with both high and low temperature stages. The facility shall include wafer mapping capabilities and simulation software. Major research proposals involving Si1icon- germanium multi-layers and device structures, the growth kinetics and structural properties of HgCdTe, the relationship between strain and optical and transport properties in III-V multi-layers, and misfit strain in precipitation hardened superalloys are presented.