Development of a High Resolution X-Ray Analysis Facility forAdvanced Materials

先进材料高分辨率 X 射线分析设备的开发

• 批准号: 9208766
• 负责人: Mark Goorsky
• 金额: $ 9.88万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-15 至 1994-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9208766&HistoricalAwards=false
• 关键词: Development; Resolution; Ray; Analysis; Facility

X-ray measurements provide non-destructive structural information for many materials systems. High resolution diffraction measurements determine sample perfection, compositional and strain modulation, and interface abruptness over a few atomic planes. X- ray reflectivity measurements address electron density modulations and interface roughness in thin film systems. Such issues are highly relevant to the growth and processing of semiconductor epitaxial heterostructures, device structures, and bulk materials. Physical information, including the effect of strain and materials perfection on optical and electronic properties, are also quantitatively determined. In other fields, these techniques enhance the study of coherency strains in superalloys and of ceramic thin films deposited by sol-gel methods. In this project, we will develop a high resolution x-ray diffraction/scattering characterization facility with both high and low temperature stages. The facility shall include wafer mapping capabilities and simulation software. Major research proposals involving Si1icon- germanium multi-layers and device structures, the growth kinetics and structural properties of HgCdTe, the relationship between strain and optical and transport properties in III-V multi-layers, and misfit strain in precipitation hardened superalloys are presented.

X射线测量提供非破坏性的结构信息 许多材料系统。 高分辨衍射 测量确定样品的完美性、成分和应变 调制和界面非线性在一些原子平面上。 X-的 射线反射率测量解决电子密度调制 以及薄膜系统中的界面粗糙度。 这些问题 与半导体的生长和加工高度相关 外延异质结构、器件结构和体材料。 物理信息，包括应变和材料的影响 光学和电学性能的完美， 定量测定。 在其他领域，这些技术 加强对高温合金中相干应变的研究， 溶胶-凝胶法沉积陶瓷薄膜。 在这个项目中， 我们将开发高分辨率的X射线衍射/散射 具有高低温特性的设备 阶段 该设施应包括晶圆测绘能力， 仿真软件 涉及硅的主要研究计划- 锗多层膜和器件结构，生长动力学 和结构特性之间的关系， III-V多层膜中的应变、光学和输运性质， 沉淀硬化高温合金中的失配应变 提出了