CAREER: A Faculty Early Career Development Proposal in Electronic Materials

9502117 Goorsky该研究计划旨在更深入地了解化合物半导体中微观材料结构和性能之间的联系。 将研究GaAs和InP基异质结构中衬底性质、初始缺陷成核和器件性能之间的关系。衬底的完善性和衬底上的失配位错形成的初始阶段和应变外延结构中的相关缺陷的误切的作用将被探索，以及拉伸或压缩应变下生长的层的行为。 这将有助于对层中应力的大小和符号如何影响缺陷的形成有一个基本的了解。这项研究将有助于提高一般性能和实现先进的设备和集成电路用于计算，信息处理和电信。 该计划的一个重要特点是在材料和加工研究的基本和技术重要领域培养研究生和本科生。 ***

9502117 Goorsky This research program aims to develop a deeper understanding of the connection between microscopic materials structure and performance in compound semiconductors. The relationship among substrate properties, initial defect nucleation, and device performance in GaAs- and InP-based heterostructures will be studied. The role of substrate perfection and substrate miscut on the initial stages of misfit dislocation formation and related defects in strained epitaxial structures will be explored as well as the behavior of layers grown under either tensile or compressive strain. This will help develop a fundamental understanding of precisely how the magnitude and sign of stress in the layers influences the formation of defects. %%% This research will contribute to improving the general performance and to the realization of advanced devices and integrated circuits used in computing, information processing, and telecommunications. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. ***