CAREER: A Faculty Early Career Development Proposal in Electronic Materials

[502117] Goorsky本研究项目旨在对化合物半导体中微观材料结构与性能之间的联系进行更深入的了解。在GaAs-和inp基异质结构中，衬底性质、初始缺陷成核和器件性能之间的关系将被研究。在应变外延结构中，衬底完美和衬底错切在错配位错形成和相关缺陷的初始阶段的作用将被探索，以及在拉伸或压缩应变下生长的层的行为。这将有助于对层中应力的大小和符号如何影响缺陷的形成有一个基本的准确理解。这项研究将有助于提高总体性能，实现用于计算、信息处理和电信的先进设备和集成电路。该计划的一个重要特点是在材料和加工研究的基础和技术上具有重要意义的领域培养研究生和本科生。＊＊＊

9502117 Goorsky This research program aims to develop a deeper understanding of the connection between microscopic materials structure and performance in compound semiconductors. The relationship among substrate properties, initial defect nucleation, and device performance in GaAs- and InP-based heterostructures will be studied. The role of substrate perfection and substrate miscut on the initial stages of misfit dislocation formation and related defects in strained epitaxial structures will be explored as well as the behavior of layers grown under either tensile or compressive strain. This will help develop a fundamental understanding of precisely how the magnitude and sign of stress in the layers influences the formation of defects. %%% This research will contribute to improving the general performance and to the realization of advanced devices and integrated circuits used in computing, information processing, and telecommunications. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. ***