GOALI: Materials Integration of III-V Compounds for Electronic Device Applications

GOALI：用于电子设备应用的 III-V 族化合物的材料集成

• 批准号: 0408715
• 负责人: Mark Goorsky
• 金额: $ 29.34万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-09-01 至 2007-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0408715&HistoricalAwards=false
• 关键词: GOALI; Materials; Integration; III; Compounds

This is a GOALI project with collaboration between UCLA and Northrop Grumman Space Technology (NGST, formerly TRW). The project addresses materials science research issues relevant to III-V semiconductor wafer bonded template substrates having high bulk resistivity and appropriate surface lattice constants for large lattice parameter materials, and with compatible thermal expansion coefficients. Research areas include: (i) bonding and polishing of the templates to a GaAs, InP, or silicon substrate, (ii) ion splitting (hydrogen-based) of InP and InAs substrates and InAlAs graded buffer layers, (iii) strain modeling and measurement of the composite structure to, for example, determine the influence of thermal expansion differences on the stability of the structures, (iv) epitaxial growth of strained layers and of device structures on wafer bonded substrates, and (v) electronic and structural characterization. Carrier transport, photoluminescence, infrared and x-ray imaging will be implemented, as well as transmission electron microscopy, and atomic force microscopy. Applications involve structures with an intermediate dielectric bonding layer. An objective is to develop III-V based wafer bond templates for subsequent epitaxial growth of device structures using non-compliant layers. Issues of layer exfoliation, polishing, thermal-mismatch induced strain, and stability during annealing and epitaxial growth will be studied, as will the electronic properties of wafer-bonded structures. An important component of the proposed research is quantification of defects formed in wafer-bonded structures under different processing conditions. The template layers to be used are InP, InAs, and InAlAs layers wafer-bonded to GaAs (or InP or silicon) substrates with silicon nitride bonding layers. The test vehicle to address the relationship between structural properties and electronic performance is a high electron mobility transistor (HEMT) structure fabricated using high indium mole fraction InGaAs channels grown on the template layers. %%% The project addresses basic research issues in a topical area of electronic materials with high technological relevance. An important feature of the project is the strong emphasis on education, with emphasis on integration of research and education. Broader impacts of the project include industrial collaboration, and collaboration with the UCLA Center for Excellence in Engineering and Diversity. Undergraduate and high school students will be involved in the project. Wafer bonding lessons will be developed for a Grassroots Science Program that targets 5th and 6th grade students with hands-on science demonstrations. Results from the research will also be highlighted in both undergraduate and graduate courses. The industrial GOALI collaborations will also broaden the educational experience of graduate students involved in the project, provide access to technologically advanced processing tools not widely available to university researchers, and increase technological exchanges through seminars and presentations. The multidisciplinary and collaborative nature of the project provides education and training in the areas of materials processing, characterization, and prototype device fabrication/operation.***

这是加州大学洛杉矶分校和诺斯罗普·格鲁曼空间技术公司（NGST，前身为TRW）合作的GOALI项目。该项目解决了与III-V族半导体晶片键合模板基板相关的材料科学研究问题，该基板具有高体电阻率和适合大晶格参数材料的表面晶格常数，并具有兼容的热膨胀系数。研究领域包括：（i）将模板结合和抛光到GaAs、InP或硅衬底，（ii）离子分裂（iii）复合结构的应变建模和测量，以例如确定热膨胀差异对结构稳定性的影响，（iv）应变层和器件结构在晶片键合衬底上的外延生长，以及（v）电子和结构表征。载流子传输，光致发光，红外和X射线成像将被实施，以及透射电子显微镜和原子力显微镜。应用涉及具有中间介电接合层的结构。一个目的是开发基于III-V族的晶片键合模板，用于使用非顺应层的器件结构的后续外延生长。层剥离，抛光，热失配引起的应变，退火和外延生长过程中的稳定性的问题将进行研究，将晶圆键合结构的电子特性。所提出的研究的一个重要组成部分是在不同的工艺条件下形成的晶圆键合结构中的缺陷的量化。所使用的模板层是用氮化硅键合层晶片键合到GaAs（或InP或硅）衬底的InP、InAs和InAlAs层。解决结构性能和电子性能之间的关系的测试车辆是一个高电子迁移率晶体管（HEMT）的结构，使用高铟摩尔分数InGaAs通道上的模板层生长。该项目解决了具有高技术相关性的电子材料专题领域的基础研究问题。该项目的一个重要特点是高度重视教育，强调研究与教育的融合。该项目的更广泛影响包括工业合作，以及与加州大学洛杉矶分校卓越工程和多样性中心的合作。本科生和高中生将参与该项目。晶圆键合课程将为基层科学计划开发，该计划针对五年级和六年级的学生进行动手科学演示。研究结果也将在本科和研究生课程中突出显示。工业GOALI合作还将扩大参与该项目的研究生的教育经验，提供大学研究人员无法广泛获得的技术先进的加工工具，并通过研讨会和演讲增加技术交流。该项目的多学科和协作性质提供了材料加工，表征和原型设备制造/操作领域的教育和培训。